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參數(shù)資料
| 型號： | TISP5095H3BJ |
| 廠商： | BOURNS INC |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 95 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | SMB, 2 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 286K |
| 代理商： | TISP5095H3BJ |
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED FEBRUARY 2005
Thermal Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted) (Continued)
TISP5xxxH3BJ Overvoltage Protection Series
I
(BO)
V
F
Breakover current
Forward voltage
dv/dt = -250 V/ms, R
SOURCE
= 300
I
F
= 5 A, t
W
= 500
μ
s
dv/dt
≤
+1000 V/
μ
s, Linear voltage ramp,
Maximum ramp value = +500 V
di/dt = +20 A/
μ
s, Linear current ramp,
Maximum ramp value = +10 A
I
T
= -5 A, t
w
= 500
μ
s
I
T
= -5 A, di/dt = +30 mA/ms
-150
-600
3
mA
V
V
FRM
Peak forward recovery voltage
5
V
V
T
I
H
On-state voltage
Holding current
-3
V
-150
-5
-600
mA
kV/
μ
s
μ
A
dv/dt
I
D
Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85V
DRM
Off-state current
V
D
= -50 V
T
A
= 85
°
C
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5150H3BJ
'5190H3BJ
-10
420
390
365
335
300
195
195
365
345
315
285
250
170
170
125
110
100
90
80
50
50
40
30
C
O
Off-state capacitance
(see Note 6)
f = 1 MHz, V
d
= 1 V rms, V
D
= -1 V
300
280
260
240
214
140
140
260
245
225
205
180
120
120
90
80
73
65
56
35
35
30
30
pF
f = 1 MHz, V
d
= 1 V rms, V
D
= -2 V
f = 1 MHz, V
d
= 1 V rms, V
D
= -50 V
f = 1 MHz, V
d
= 1 V rms, V
D
= -100 V
NOTE:
6. Up to 10 MHz the capacitance is essentially independent of frequency Above 10 MHz the effective capacitance is strongly
dependent on connection inductance.
Parameter
Test Conditions
Min
Typ
Max
Unit
R
θ
JA
Junction to ambient thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
(see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
113
°
C/W
50
NOTE:
7. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected wth 5 A rated printed wiring track widths.
Parameter
Test Conditions
Min Typ Max
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP5095H3BJR | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5095H3BJR-S | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5110H3BJR | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5110H3BJR-S | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5115H3BJ | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP5095H3BJR | 功能描述:硅對稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5095H3BJR-S | 功能描述:硅對稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5110H3BJ | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5110H3BJR | 功能描述:硅對稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5110H3BJR-S | 功能描述:硅對稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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