參數(shù)資料
型號(hào): TISP5110H3BJR
廠商: BOURNS INC
元件分類: 浪涌電流限制器
英文描述: FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述: 110 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
封裝: SMB, 2 PIN
文件頁(yè)數(shù): 9/11頁(yè)
文件大小: 286K
代理商: TISP5110H3BJR
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED FEBRUARY 2005
The star-connection of three TISP5xxxH3BJ protectors gives a protection circuit which has a low differential capacitance to ground (Figure 13).
This example, a -100 V ISDN line is protected. In Figure 13, the circuit illustration A shows that protector Th1 will be forward biased as it is
connected to the most negative potential. The other two protectors, Th2 and Th3 will be reverse biased as protector Th1 will pull their common
connection to within 0.5 V of the negative voltage supply.
Illustration B shows the equivalent capacitances of the two reverse biased protectors (Th2 and Th3) as 29 pF each and the capacitance of the
forward biased protector (Th1) as 600 pF. Illustration C shows the delta equivalent of the star capacitances of illustration B. The protector
circuit differential capacitance will be 26 - 1 = 25 pF. In this circuit, the differential capacitance value cannot exceed the capacitance value of
the ground protector (Th3).
A bridge circuit can be used for low capacitance differential. Whatever the potential of the ring and tip conductors are in Figure 14, the array of
steering diodes, D1 through to D6, ensure that terminal 1 of protector Th1 is always positive with respect to terminal 2. The protection voltage
will be the sum of the protector Th1, V(BO), and the forward voltage of the appropriate series diodes. It is important to select the correct
diodes. Diodes D3 through to D6 divert the currents from the ring and tip lines. Diodes D1 and D2 will carry the sum of the ring and tip currents
and so conduct twice the current of the other four diodes. The diodes need to be specified for forward recovery voltage, VFRM, under the
expected impulse conditions. (Some conventional a.c. rectifiers can produce as much as 70 V of forward recovery voltage, which would be an
extra 140 V added to the V(BO) of Th1). In principle the bridge circuit can be extended to protect more than two conductors by adding extra
legs to the bridge.
TISP5xxxH3BJ Overvoltage Protection Series
APPLICATIONS INFORMATION (CONTINUED)
AI4XAB
C
-99.5 V
29 pF
Th1
Th2
Th3
SIGNAL
C
-99.5 V
C
0.5 V
600 pF
29 pF
26 pF
1 pF
26 pF
A) STAR-CONNECTED
U-INTERFACE
PROTECTOR
B) EQUIVALENT
TISP5150H3BJ
CAPACITANCES
C) DELTA EQUIVALENT
SHOWS 25 pF
LINE UNBALANCE
- 100 V
- 100 V
- 100 V
Figure 13. ISDN Low Capacitance U-Interface Protection
Th1
RING
AI5XAC
D1
D2
D3
D4
D5
D6
TIP
1
2
Figure 14. Low Capacitance Bridge Protection Circuit
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TISP5115H3BJ 制造商:Bourns Inc 功能描述:THYRISTOR TVS UNIDIRECTIONAL 115V
TISP5115H3BJR 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP5115H3BJR-S 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP5150H3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS