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參數(shù)資料
| 型號： | TISP61521DR-S |
| 廠商： | BOURNS INC |
| 元件分類： | 保護(hù)電路 |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 191K |
| 代理商： | TISP61521DR-S |
APRIL 2001 REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Absolute Maximum Ratings, TJ = 25
°
C (Unless Otherwise Noted)
TISP61521 SLIC Protector
Description (continued)
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -150 V. The protector gate is
connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will
then track the negative supply voltage and the overvoltage stress on the SLIC is minimized.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative
supply rail value. If sufficient current is available from the overvoltage, then the protector will switch into a low voltage on-state condition. As
the overvoltage subsides, the high holding current of TISP61521 crowbar prevents d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system
operation they are virtually transparent. The TISP61521 buffered gate design reduces the loading on the SLIC supply during overvoltages
caused by power cross and induction. The TISP61521 is available in an 8-pin plastic small-outline surface mount package.
NOTES: 1. These voltage ratings are set by the -150 V maximum supply voltage plus the 12 V diode overshoot (V
GKRM
) and the 25 V SCR
overshoot (V
DRM
).
2. Initially, the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions. The
rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal
pairs may have their rated current values applied simultaneously (in this case, the Ground terminal current will be twice the rated
current value of an individual terminal pair).
3. Values for V
GG
= -48 V. For values at other voltages, see Figure 2.
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, V
GK
= 0, -40
°
C
≤
T
J
≤
85
°
C (see Note 1)
Repetitive peak gate-cathode voltage, V
KA
= 0, -40
°
C
≤
T
J
≤
85
°
C (see Note 1)
Non-repetitive peak on-state pulse current (see Note 2)
V
DRM
V
GKRM
-175
V
-162
V
I
TSP
A
2/10
μ
s (GR-1089-CORE, 2/10
μ
s voltage waveshape)
1/20
μ
s (K.22, VDE0878, 1.2/50 voltage waveshape)
8/20
μ
s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160
μ
s (FCC Part 68, 10/160
μ
s voltage waveshape)
0.2/310
μ
s (I3124, 0.5/700
μ
s voltage waveshape)
5/310
μ
s (VDE 0433, 10/700
μ
s voltage waveshape)
5/310
μ
s (ITU-T K.20/21, K.44 10/700
μ
s voltage wave shape)
5/320
μ
s (FCC Part 68, 9/720
μ
s voltage waveshape)
10/560
μ
s (FCC Part 68, 10/560
μ
s voltage waveshape)
10/1000
μ
s (GR-1089-CORE, 10/1000
μ
s voltage waveshape)
Non-repetitive peak on-state current, 50 Hz (see Notes 2 and 3)
170
50
100
50
40
40
40
40
35
30
I
TSM
A
0.01 s
15
1 s
5
Non-repetitive peak gate current, 10 ms half-sine wave, cathodes commoned (see Notes 1 and
2)
I
GSM
+2
A
Junction temperature
T
J
T
stg
-40 to +150
°
C
C
Storage temperature range
-65 to +150
°
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61521DS | 制造商:Bourns Inc 功能描述: |
| TISP61521D-S | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61CAP3 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:PROGRAMMABLE OVERVOLTAGE PROTECTOR |
| TISP61CAP3D-S | 制造商:Bourns Inc 功能描述: |
| TISP61CAP3P | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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