參數(shù)資料
型號： TISP6NTP2C
廠商： Bourns Inc.
英文描述： High Voltage Ringing SLIC Protector
中文描述： 高壓振鈴用戶接口保護(hù)
文件頁數(shù)： 3/9頁
文件大小： 281K
代理商： TISP6NTP2C
MARCH 2002 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2C High Voltage Ringing SLIC Protector
Electrical Characteristics, 0
°
C
≤
TJ
≤
70
°
C (Unless Otherwise Noted)
Parameter
Thermal Characteristics
Test Conditions
Min
Typ
Max
Unit
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= 25
°
C
-5
μ
A
-50
μ
A
V
(BO)
Ramp breakover
voltage
UL 497B, dv/dt
≤
±
100 V/
μ
s, di/dt =
±
10 A/
μ
s,
V
GG
= -100 V, Maximum ramp value =
±
10 A
2/10
μ
s, I
TM
= -27 A, di/dt = -27 A/
μ
s, R
S
= 50
, V
GG
= -100 V,
(see Note 3)
T
J
= 25
°
C
-112
V
V
(BO)
Impulse breakover
voltage
-115
V
V
GK(BO)
Gate-cathode impulse
breakover voltage
2/10
μ
s, I
TM
= -27 A, di/dt = -27 A/
μ
s, R
S
= 50
, V
GG
= -100 V,
(see Note 3)
15
V
V
F
Forward voltage
I
F
= 5 A, t
w
= 200
μ
s
UL 497B, dv/dt
≤
±
100 V/
μ
s, di/dt =
±
10 A/
μ
s,
Maximum ramp value =
±
10 A
3
V
V
FRM
Ramp peak forward
recovery voltage
T
J
= 25
°
C
5
V
V
FRM
Impulse peak forward
recovery voltage
2/10
μ
s, I
TM
= -27 A, di/dt = -27 A/
μ
s, R
S
= 50
,
(see Note 3)
12
V
I
H
Holding current
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -100 V
-150
mA
I
GKS
Gate reverse current
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
T
J
= 25
°
C
-5
μ
A
-50
μ
A
I
GT
Gate trigger current
I
T
= -3 A, t
p(g)
≥
20
μ
s, V
GG
= -100 V
T
J
= 25
°
C
5
mA
6
mA
V
GT
Gate-cathode trigger
voltage
I
T
= -3 A, t
p(g)
≥
20
μ
s, V
GG
= -100 V
2.5
V
C
KA
Cathode-anode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 4)
V
D
= -3 V
V
D
= -48 V
100
pF
50
pF
NOTES: 3. GR-1089-CORE intra-building 2/10, 1.5 kV conditions with 20 MHz bandwidth. The diode forward recovery and the thyristor gate
impulse breakover (overshoot) are not strongly dependent of the SLIC supply voltage value (V
GG
).
4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Parameter
Test Conditions
Min
Typ
Max
Unit
R
θ
JA
Junction to free air thermal resistance
T
A
= 70
°
C, EIA/JESD51-3 PCB,
EIA/JESD51-2 environment, P
tot
= 0.52 W
160
°
C/W
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TISP6NTP2C_07 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:TISP6NTP2C High Voltage Ringing SLIC Protector
TISP6NTP2CD 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP6NTP2CDR 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP6NTP2CDR-S 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP6NTP2CD-S 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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