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參數資料
| 型號： | TISP6NTP2CDR-S |
| 廠商： | BOURNS INC |
| 元件分類： | 保護電路 |
| 英文描述： | High Voltage Ringing SLIC Protector |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 2/9頁 |
| 文件大?。?/td> | 281K |
| 代理商： | TISP6NTP2CDR-S |
MARCH 2002 – REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (Continued)
TISP6NTP2C High Voltage Ringing SLIC Protector
Recommended Operating Conditions
Absolute Maximum Ratings, 0
°
C
≤
TJ
≤
70
°
C (Unless Otherwise Noted)
The systems described often have the need to source two POTS (Plain Old Telephone Service) lines, one for a telephone and the other for a
facsimile machine. In a single surface mount package, the TISP6NTP2C protects the two POTS line SLICs (Subscriber Line Interface Circuits)
against overvoltages caused by lightning, a.c. power contact and induction.
The TISP6NTP2C has an array of four buffered P-gate forward conducting thyristors with twin commoned gates and a common anode
connection. Each thyristor cathode has a separate terminal connection. An antiparallel anode-cathode diode is connected across each
thyristor. The buffer transistors reduce the gate supply current.
In use, the cathodes of an TISP6NTP2C thyristors are connected to the four conductors of two POTS lines (see applications information).
Each gate is connected to the appropriate negative voltage battery feed of the SLIC driving that line pair. By having separate gates, each SLIC
can be protected at a voltage level related to the negative supply voltage of that individual SLIC. The anode of the TISP6NTP2C is connected
to the SLIC common. The TISP6NTP2C voltage and current ratings also make it suitable for the protection of ISDN d.c. feeds of down to
-115 V (ETSI Technical Report ETR 080:1993, ranges 1 to 5).
Positive overvoltages are clipped to common by forward conduction of the TISP6NTP2C antiparallel diode. Negative overvoltages are initially
clipped close to the SLIC negative supply by emitter follower action of the TISP6NTP2C buffer transistor. If sufficient clipping current flows,
the TISP6NTP2C thyristor will regenerate and switch into a low voltage on-state condition. As the overvoltage subsides, the high holding
current of the TISP6NTP2C prevents d.c. latchup.
Component
Min
Typ
Max
Unit
C
G
Gate decoupling capacitor
100
220
nF
R
S
Series resistor for GR-1089-CORE intra-building surge survival, section 4.5.9, tests 1 and 2
5
50
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
10
50
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, V
GK
= 0
Repetitive peak gate-cathode voltage, V
KA
= 0
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
V
DRM
V
GKRM
-170
V
-167
V
I
PPSM
A
10/1000 (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
5/320 (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700)
2/10 (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
25
40
90
Non-repetitive peak on-state current, 50 Hz/60 Hz (see Notes 1 and 2)
I
TSM
A
0.1 s
7
1 s
5 s
300 s
900 s
2.7
1.5
0.45
0.43
Non-repetitive peak gate current, 1/2
μ
s pulse, cathodes commoned (see Note 1)
I
GSM
T
A
T
J
T
stg
+25
A
Operating free-air temperature range
-40 to +85
°
C
Junction temperature
-40 to +150
°
C
Storage temperature range
-40 to +150
°
C
NOTES: 1. Initially, the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions.
Gate voltage range is -20 V to -155 V.
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathode-
anode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in
this case the anode terminal current will be four times the rated current value of an individual terminal pair).
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TISP6NTP2CD-S | 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP6NTP2C-R6-S | 功能描述:SCR Circuit Protection TVS - Other Composition - SURGE PROTECTOR QUAD PROG 90A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP7015 | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:Three Terminal Very Low Voltage (VLV) Protection |
| TISP70151D | 功能描述:SCR Triple Element RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP70151D-S | 功能描述:SCR Triple Element RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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