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參數(shù)資料
| 型號(hào)： | TK19H50C |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MOS VI) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅N溝道馬鞍山型（馬鞍山六） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 346K |
| 代理商： | TK19H50C |
TK19H50C
2005-08-23
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π
-MOS VI)
TK19H50C
Switching Regulator Applications
z
Low drain
source ON resistance
z
High forward transfer admittance
z
Low leakage current
z
Enhancement mode
Maximum Ratings
(Ta = 25°C)
: R
DS
(ON)
= 0. 25
(typ.)
: |Y
fs
| = 14 S (typ.)
: I
DSS
= 100
μ
A (max) (V
DS
= 500 V)
: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Characteristic
Symbol
Rating
Unit
Drain
source voltage
V
DSS
500
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
500
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
19
A
Drain current
Pulse (Note 1)
I
DP
76
A
Drain power dissipation (Tc = 25°C)
P
D
150
W
Single-pulse avalanche energy
(Note 2)
E
AS
968
mJ
Avalanche current
I
AR
19
A
Repetitive avalanche energy (Note 3)
E
AR
15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
0.833
°C / W
Thermal resistance, channel to
ambient
R
th (ch
a)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 4.56 mH, R
G
= 25
, I
AR
= 19 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16K1A
Weight: 3.8 g (typ.)
1
3
2
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