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參數(shù)資料
| 型號： | TK2150 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | 運動控制電子 |
| 英文描述： | STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY |
| 中文描述： | 類立體聲功率200W - T的數(shù)字音頻放大器驅動程序使用數(shù)字功率處理技術 |
| 文件頁數(shù)： | 25/34頁 |
| 文件大?。?/td> | 663K |
| 代理商： | TK2150 |
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Tripath Technology, Inc. - Technical Information
25
TK2150 – Rev. 1.0/12.02
only sink current into the regulator output and will not be capable of sourcing the current required
by VN10. Furthermore, problems can arise since VN10 will not track movements in VNN. The
external VN10 supply must be able to source a maximum of 250mA into the VN10 pin. Thus, a
positive supply must be used and must be referenced to the VNN rail. If the external VN10
supply does not track fluctuations in the VNN supply or is not able to source current into the VN10
pin, the TP2150 will not work and can also become permanently damaged.
Figure 7 shows the correct way to power the TP2150:
Figure 7: Proper Power Supply Connection
Output Transistor Selection
The key parameters to consider when selecting what MOSFET to use with the TK2150 are drain-
source breakdown voltage (BVdss), gate charge (Qg), and on-resistance (R
DS(ON)
).
The BVdss rating of the MOSFET needs to be selected to accommodate the voltage swing
between V
SPOS
and V
SNEG
as well as any voltage peaks caused by voltage ringing due to
switching transients. With a ‘good’ circuit board layout, a BVdss that is 50% higher than the VPP
and VNN voltage swing is a reasonable starting point. The BVdss rating should be verified by
measuring the actual voltages experienced by the MOSFET in the final circuit.
Ideally a low Qg (total gate charge) and low R
DS(ON)
are desired for the best amplifier
performance. Unfortunately, these are conflicting requirements since R
DS(ON)
is inversely
proportional to Qg for a typical MOSFET. The design trade-off is one of cost versus performance.
A lower R
DS(ON)
means lower I
R
DS(ON)
losses but the associated higher Qg translates into higher
switching losses (losses = Qg x 10 x 1.2MHz). A lower R
DS(ON)
also means a larger silicon die
and higher cost. A higher R
DS(ON)
means lower cost and lower switching losses but higher I
R
DSON
losses.
Gate Resistor Selection
The gate resistors, R
G
, are used to control MOSFET switching rise/fall times and thereby
minimize voltage overshoots. They also dissipate a portion of the power resulting from moving
the gate charge each time the MOSFET is switched. If R
G
is too small, excessive heat can be
generated in the driver. Large gate resistors lead to slower MOSFET switching, which requires a
larger break-before-make (BBM) delay.
Break-Before-Make (BBM) Timing Control
VPP
V5
VN10
VNN
PGND
VPP
VNN
5V
10V
AGND
F. BEAD
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