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參數(shù)資料
| 型號： | TLC2801Z |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Advanced LinCMOSE⑩ LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS |
| 中文描述： | 高級LinCMOSE⑩低噪聲高精度運算放大器 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 192K |
| 代理商： | TLC2801Z |
TLC2801Z, TLC2801Y
Advanced LinCMOS
LOW-NOISE PRECISION
OPERATIONAL AMPLIFIERS
SLOS116B – JULY 1982 – REVISED SEPTEMBER 1996
3–7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at V
DD
= 5 V, T
A
= 25
°
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLC2801Z
MIN
UNIT
TYP
100
MAX
500
VIO
Input offset voltage
μ
V
Input offset voltage long term drift (see Note 4)
Input offset voltage long-term drift (see Note 4)
0 001
0.001
0 005
0.005
μ
V/mo
VIC= 0,
RS= 50
RS = 50
IIO
IIB
Input offset current
0.5
pA
Input bias current
1
pA
VICR
Common-mode input voltage range
RS = 50
RS = 50
0
to
2.7
V
VOH
VOL
Maximum high-level output voltage
RL = 10 k
IO = 0
VO = 1 V to 4 V,
VO = 1 V to 4 V,
VO = 0,
RS = 50
VDD = 4.6 V to 16 V
VO = 2.5 V,
RL = 10 k
IO = 0
RL = 500 k
RL = 10 k
VIC = VICRmin,
RS = 50
VDD = 4.6 V to 16 V
No load
4.7
4.8
V
Maximum low-level output voltage
0
50
mV
AVD
Large signal differential voltage amplification
Large-signal differential voltage amplification
150
315
V/mV
25
55
CMRR
Common-mode rejection ratio
90
110
dB
kSVR
IDD
Supply-voltage rejection ratio (
VDD
±
/
VIO)
Supply current
90
110
dB
1
1.5
mA
operating characteristics at V
DD
= 5 V, T
A
= 25
°
C
PARAMETER
TEST CONDITIONS
TLC2801Z
MIN
UNIT
TYP
MAX
SR
Positive slew rate at unity gain
VO = 0.5 V to 2.5 V,
CL = 100 pF
f = 10 Hz
RL = 10 k
,
1.8
2.5
V/
μ
s
Vn
Equivalent input noise voltage
18
nV/
√
Hz
f = 1 kHz
8
VN(PP)
Peak-to-peak equivalent input noise voltage
f = 0.1 to 1 Hz
0.5
V
μ
f = 0.1 to 10 Hz
0.7
In
Equivalent input noise current
0.6
pA/
√
Hz
Gain-bandwidth product
f = 10 kHz,
CL = 100 pF
RL = 10 k
,
RL = 10 k
,
1.8
MHz
φ
m
NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150
°
C extrapolated
to TA = 25
°
C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
Phase margin at unity gain
CL = 100 pF
45
°
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