參數(shù)資料
型號(hào): TLC5540INSRG4
廠商: TEXAS INSTRUMENTS INC
元件分類: ADC
英文描述: 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDSO24
封裝: GREEN, PLASTIC, SOP-24
文件頁(yè)數(shù): 17/21頁(yè)
文件大?。?/td> 407K
代理商: TLC5540INSRG4
TLC5540
SLAS105D JANUARY 1995 REVISED APRIL 2004
www.ti.com
5
electrical characteristics at VDD = 5 V, VI(REFT) = 2.6 V, VI(REFB) = 0.6 V, fs = 40 MSPS, TA = 25°C
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
EL
Linearity error, integral
TA = 25°C
±0.6
±1
EL
Linearity error, integral
fs = 40 MSPS,
TA = MIN to MAX
±1
LSB
ED
Linearity error, differential
fs = 40 MSPS,
VI = 0.6 V to 2.6 V
TA = 25°C
±0.3 ±0.75
LSB
ED
Linearity error, differential
VI = 0.6 V to 2.6 V
TA = MIN to MAX
±1
Self bias (1), VRB
Short REFB to REFBS
See Figure 13
0.57
0.61
0.65
Self bias (1), VRT
Short REFT to REFTS
See Figure 13
2.47
2.63
2.80
V
Self bias (2), VRB
Short REFB to AGND
See Figure 14
AGND
V
Self bias (2), VRT
Short REFT to REFTS
See Figure 14
2.18
2.29
2.4
Iref
Reference-voltage current
VI(REFT) VI(REFB) = 2 V
5.2
7.5
12
mA
Rref
Reference-voltage resistor
Between REFT and REFB terminals
165
270
350
Ci
Analog input capacitance
VI(ANLG) = 1.5 V + 0.07 Vrms
4
pF
EZS
Zero-scale error
VI(REFT) VI(REFB) = 2 V
18
43
68
mV
EFS
Full-scale error
VI(REFT) VI(REFB) = 2 V
25
0
25
mV
IIH
High-level input current
VDD = 5.25 V,
VIH = VDD
5
A
IIL
Low-level input current
VDD = 5.25 V,
VIL = 0
5
A
IOH
High-level output current
OE = GND,
VDD = 4.75 V, VOH = VDD 0.5 V
1.5
mA
IOL
Low-level output current
OE = GND,
VDD = 4.75 V, VOL = 0.4 V
2.5
mA
IOZH(lkg)
High-level
high-impedance-state
output leakage current
OE = VDD,
VDD = 5.25,
VOH = VDD
16
A
IOZL(lkg)
Low-level
high-impedance-state
output leakage current
OE = VDD,
VDD = 4.75,
VOL = 0
16
A
IDD
Supply current
fs = 40 MSPS, CL ≤ 25 pF,
NTSC ramp wave input, See Note 1
17
27
mA
Conditions marked MIN or MAX are as stated in recommended
operating conditions.
National Television System Committee
(1) Supply current specification does not include Iref.
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