- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄4566 > TLE8261-2E (Infineon Technologies)IC SYSTEM BASIS CHIP DSO-36 PDF資料下載
參數(shù)資料
| 型號： | TLE8261-2E |
| 廠商： | Infineon Technologies |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SYSTEM BASIS CHIP DSO-36 |
| 標準包裝： | 1,000 |
| 類型： | 收發(fā)器 |
| 應用： | 自動 |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 36-BSSOP（0.295"，7.50mm 寬）裸露焊盤 |
| 供應商設備封裝： | PG-DSO-36 |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | SP000454466 |
ESD Robustness of TLE6251DS in comparison with the competition
ESD robustness: holding the leadership in performance and innovation
O NE OF T h E S PE CIFIC C h ALLENGE S for a transceiver device is to withstand the harsh signals that occur on
the bus, from ESD (Electro Static Discharges) to voltage peaks resulting from the parasitic inductances of bus cables. A robust
transceiver also does not need expensive external protection components such a zener diodes or varistors.
O VE r T h E P AS T y EA r S Infineon developed and improved an innovative integrated protection that enables the
dissipation of the energy, which is converted during an ESD event, through the chip from top to bottom. Silicon On Isolator (SOI)
type technologies where the active side of the chip is decoupled from its bottom by an insulator do not allow such concepts.
Infineons products can hold more than 10 kVolts of discharges using ISO 61000-4-2 test standard, an application oriented testing
method that applies an energy which is five times higher than the standard hBM (human Body Model) test that simulates typical
handling events.
6
Competition
Infineon TLE7259-2G
M
ax
imum
ESD
di
sc
har
ge
re
si
st
anc
e
at
bu
s
pin
s
(kV)
ISO 61000-4-2 150 pF / 330 T
(without bus filter)
ISO 61000-4-2 150 pF / 330 T
(with bus filter C = 3.3 nF)
+1 kV
+15 kV
+1 kV
+15 kV
Competition
Infineon TLE6251DS
M
ax
imum
ESD
di
sc
har
ge
re
si
st
anc
e
at
bu
s
pin
s
(kV)
ISO 61000-4-2 150 pF / 330 T
ISO 61000-4-2 150 pF / 2 kT
+2 kV
+10 kV
+1,5 kV
+13 kV
ESD Robustness of TLE7259-2G in comparison with the competition
08-01-16 RZ Transceiver Gesamt.indd 6
16.01.2008 12:23:30 Uhr
相關PDF資料 |
PDF描述 |
|---|---|
| AMM18DTAT | CONN EDGECARD 36POS R/A .156 SLD |
| HMC43DRTN-S93 | CONN EDGECARD 86POS DIP .100 SLD |
| HMC43DRTH-S93 | CONN EDGECARD 86POS DIP .100 SLD |
| HMC43DREN-S93 | CONN EDGECARD 86POS .100 EYELET |
| MIC2212-KMYML TR | IC REG LDO 2.6V/2.8V 10-MLF |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TLE82612EFUMA1 | 制造商:Infineon Technologies AG 功能描述:IC SYSTEM BASIS CHIP DSO-36 |
| TLE82612EXUMA1 | 功能描述:CAN 接口集成電路 BODY SYSTEM ICS RoHS:否 制造商:Texas Instruments 類型:Transceivers 工作電源電壓:5 V 電源電流: 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:SOIC-8 封裝:Tube |
| TLE82612EXUMA2 | 制造商:Infineon Technologies AG 功能描述:BODY SYSTEM ICS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:Universal System Basis Chip |
| TLE8261E | 功能描述:CAN 接口集成電路 BODY SYSTEM ICS RoHS:否 制造商:Texas Instruments 類型:Transceivers 工作電源電壓:5 V 電源電流: 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:SOIC-8 封裝:Tube |
| TLE8261EXUMA1 | 功能描述:CAN 接口集成電路 BODY SYSTEM ICS RoHS:否 制造商:Texas Instruments 類型:Transceivers 工作電源電壓:5 V 電源電流: 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。