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參數(shù)資料
| 型號(hào)： | TLN117 |
| 廠商： | Toshiba Corporation |
| 英文描述： | INFRARED LED GAAS INFRAED EMITTER |
| 中文描述： | 紅外發(fā)光二極管公認(rèn)審計(jì)INFRAED發(fā)射器 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 218K |
| 代理商： | TLN117 |
TLN117(F)
2007-10-01
2
Optical And Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
= 10mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5V
―
―
10
μ
A
TLN117(F)
0.8
―
―
TLN117(B,F)
2
―
7.5
Radiant intensity
I
E
I
F
= 20mA
TLN117(C,F)
5
―
18.7
mW / sr
Radiant power
P
O
I
F
= 20mA
―
2.5
―
mW
Capacitance
C
T
V
R
= 0, f = 1MHz
―
30
―
pF
Peak emission wavelength
λ
P
I
F
= 20mA
―
940
―
nm
Spectral line half width
Δλ
I
F
= 20mA
―
50
―
nm
Half value angle
θ
2
1
I
F
= 20mA
―
±15
―
°
Precautions
Please be careful of the followings.
1.
When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
2.
Radiation intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
(0)
P
(t)
P
(0)
I
(t)
I
O
O
E
E
=
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| TLN117B | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA INFRARED LED GAAS INFRAED EMITTER |
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