參數(shù)資料
型號(hào)： TLP270D
廠商： Toshiba Corporation
英文描述： TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET / Photo−Transistor
文件頁(yè)數(shù)： 6/8頁(yè)
文件大小： 236K
代理商： TLP270D
TLP270D
2002-09-25
6
Darlington Transistor
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector base voltage
V
CBO
30
V
Collector emitter voltage
V
CEO
30
V
Emitter base voltage
V
EBO
10
V
Collector current
I
C
0.15
A
Base current
I
B
20
mA
Collector power dissipation
P
C
350
mW
Junction temperature
T
j
125
°C
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector off current
I
CBO
V
CB
30V, I
E
0
―
―
10
A
Emitter off current
I
EBO
V
EB
10V, I
C
0
―
―
10
A
Collector emitter breakdown
voltage
V
(BR)CEO
I
C
10mA, I
B
0
30
―
―
V
DC current gain
h
FE
V
CE
2V, I
C
150mA
4000
―
―
Collector emitter saturation
voltage
V
CE(sat)
I
C
0.15A, I
B
1mA
―
―
1.5
V
Turn on time
t
on
―
0.20
―
Storage time
t
stg
―
0.6
―
Switching
time
Fall time
t
f
I
B
1mA, V
CC
15V,
R
L
15
―
0.3
―
s
Bridge Rectifier
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
30
V
Average output rectified current
I
O
0.15
A
Peak one cycle surge forward
current
I
FSM
0.5
A
Junction temperature
T
j
125
°C
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
FM
I
FM
0.12A
―
―
1.7
V
Repetitive peak reverse
current
I
RRM
V
RRM
rated
―
―
10
A
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