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參數(shù)資料
| 型號： | TLP321-2 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Photocoupler GaAs Ired & Photo−Transistor |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 228K |
| 代理商： | TLP321-2 |
TLP321,TLP321-2,TLP321-4
2002-09-25
3
Maximum Ratings
(Ta = 25°C)
Rating
Characteristic
Symbol
TLP321 1
TLP321 2
TLP321 4
Unit
Forward current
I
F
60
50
mA
Forward current derating
I
F
/ °C
0.7 (Ta
≥
39°C)
0.5 (Ta
≥
25°C)
mA / °C
Pulse forward current
I
FP
1 (100μs pulse, 100pps)
A
Reverse voltage
V
R
5
V
L
Junction temperature
T
j
125
°C
Collector emitter voltage
V
CEO
80
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
50
mA
Collector power dissipation
(1 Circuit)
P
C
150
100
mW
Collector power dissipation
derating (1 Circuit, Ta
≥
25°C)
P
C
/ °C
1.5
1.0
mW / °C
D
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Operating temperature range
T
opr
55~100
°C
Lead soldering temperature
T
sol
260 (10s)
°C
Total package power dissipation
R
T
250
150
mW
Total package power dissipation
derating (Ta
≥
25°C)
P
T
/ °C
2.5
1.5
mW / °C
Isolation voltage
(Note 1)
BV
S
5000 (AC, 1min., RH
≤
60%)
Vrms
(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins
shorted together.
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