參數資料
型號: TLS24306
廠商: Texas Instruments, Inc.
英文描述: Magnetoresistive/Thin-Film Read/Write Preamplifiers(6通道磁阻/薄膜讀/寫用前置放大器)
中文描述: 磁阻/薄膜讀/寫前置放大器(6通道磁阻/薄膜讀/寫用前置放大器)
文件頁數: 16/23頁
文件大?。?/td> 489K
代理商: TLS24306
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
16
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
write mode (continued)
Actual head current (I
head
) is determined by the following formula:
I
I(W)
I
head
1
Rhead
Rdamp
Where:
I
I(W)
is the write current in mA.
R
damp
is the damping resistance in
.
R
head
is the head resistance in
.
During read mode, TI recommends that WDX or WDY have a potential
a differential voltage
100 mV. The differential voltage can be set to zero during the idle mode.
2.5 V and that WDX and WDY have
write mode with MR-head bias current on
Taking CS, R/W, and BHV/IBON low activates the write mode with MR-head bias current on. In this mode, the
bias current on the MR head selected by HS0–HS2 (HS for TLS24302) is instrumental in performing fast
recovery-to-read mode.
servo write mode
Taking CS and R/W low and FLT/SE to
data is written to several heads. TI recommends that a pullup resistor of 4.7 k
be connected to FLT/SE to
ensure that the maximum allowable FLT/SE voltage is not exceeded during the servo mode when the applied
voltage is 12 V. In the servo mode, the same data is written to the selected heads as shown in Table 4 and
Table 5.
V
CC
+1.2 V activates the servo write mode. In this mode, the same
Table 4. TLS24302 Servo Write-Head Select
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0, 1
1
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HEAD SELECTED
HS2
HS1
HS0
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0
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0
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0, 1, 2, 3, 4, 5
1
0
1
1, 4
1
1
X
During servo write for all channels, V
CC
and/or write current must be set lower than normal writing mode to
prevent exceeding the power dissipation limit of the package. Continuous operations in the servo write mode
must be limited to 1 hour. Recommended operating room temperature is 25
°
C.
(10)
相關PDF資料
PDF描述
TLS24308 Magnetoresistive/Thin-Film Read/Write Preamplifiers(8通道磁阻/薄膜讀/寫用前置放大器)
TLS24310 Magnetoresistive/Thin-Film Read/Write Preamplifiers(10通道磁阻/薄膜讀/寫用前置放大器)
TLS24318 Magnetoresistive/Thin-Film Read/Write Preamplifiers(8通道磁阻/薄膜讀/寫用前置放大器)
TLS24320 Magnetoresistive/Thin-Film Read/Write Preamplifiers(10通道磁阻/薄膜讀/寫用前置放大器)
TLSU163 TLSU163
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