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參數(shù)資料
| 型號： | TLV2344Y |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | LinCMOSE LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS |
| 中文描述： | LinCMOSE低壓高速運算放大器 |
| 文件頁數(shù)： | 2/34頁 |
| 文件大?。?/td> | 519K |
| 代理商： | TLV2344Y |
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TLV2342, TLV2342Y, TLV2344, TLV2344Y
LinCMOS
LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS
SLOS194 – FEBRUARY 1997
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate
LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low input
bias currents. These parameters combined with good ac performance make the TLV234x effectual in
applications such as high-frequency filters and wide-bandwidth sensors.
To facilitate the design of small portable equipment, the TLV234x is made available in a wide range of package
options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has
significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only
1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.
TLV2342Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2342. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
×
4 MILS MINIMUM
TJmax = 150
°
C
TOLERANCES ARE
±
10%.
ALL DIMENSIONS ARE IN MILS.
+
–
1OUT
1IN+
1IN–
VDD
(8)
(6)
(3)
(2)
(5)
(1)
(7)
(4)
VDD–/GND
+
–
2OUT
2IN+
2IN–
59
72
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(1)
相關PDF資料 |
PDF描述 |
|---|---|
| TLV2361(中文) | Single High-Performance, Low-Voltage OP AMP(高性能，可編程低電壓單運放) |
| TLV2362(中文) | Dual High-Performance, Low-Voltage OP AMP(高性能，可編程低電壓雙運放) |
| TLV2432(中文) | Advanced Lincmos Rail-TO-Rail Output Wide-Input-Voltage Dual OP AMP(寬輸入電壓，低功耗，中速，高輸出驅動雙運放) |
| TLV2442(中文) | Advanced Lincmos Rail-TO-Rail Output Wide-Input-Voltage Dual OP AMP(雙路寬輸入電壓，高速，高輸出驅動運放) |
| TLV2444IPW | Advanced LinCMOSE RAIL-TO-RAIL OUTPUT WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TLV2352 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS |
| TLV23521PWR | 制造商:Texas Instruments 功能描述: |
| TLV2352ID | 功能描述:校驗器 IC Dual Differential RoHS:否 制造商:STMicroelectronics 產品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應時間: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLV2352IDG4 | 功能描述:校驗器 IC Dual Differential RoHS:否 制造商:STMicroelectronics 產品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應時間: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLV2352IDR | 功能描述:校驗器 IC Dual Lo-Vltg LinCMOS Differential RoHS:否 制造商:STMicroelectronics 產品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應時間: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
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