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參數(shù)資料
| 型號： | TLV3012AIDBVRG4 |
| 英文描述： | CONN,DIN,RA PCMT,96,F |
| 中文描述： | Nanopower，電壓為1.8V，SOT23封裝的電壓基準(zhǔn)比較 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 236K |
| 代理商： | TLV3012AIDBVRG4 |
TLV3011, TLV3012
SBOS300B
2
www.ti.com
Supply Voltage .................................................................................... +7V
Signal Input Terminals, Voltage
(2)
...........................
–
0.5V to (V+) + 0.5V
Current
(2)
..................................................
±
10mA
Output Short-Circuit
(3)
.............................................................. Continuous
Operating Temperature ..................................................
–
55
°
C to +150
°
C
Storage Temperature .....................................................
–
55
°
C to +150
°
C
Junction Temperature.................................................................... +150
°
C
Lead Temperature (soldering, 10s)............................................... +300
°
C
ESD Rating (Human Body Model) .................................................. 2000V
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only,
and functional operation of the device at these or any other
conditions beyond those specified is not implied.
(2) Input terminals are diode-clamped to the power-supply rails. In
put signals that can swing more than 0.5V beyond the supply
rails should be current limited to 10mA or less.
(3) Short-circuit to ground.
PIN CONFIGURATIONS
ABSOLUTE MAXIMUM RATINGS
(1)
Top View
NOTE: Pin 1 is determined by orienting package marking as shown.
For the most current package and ordering information, see
the Package Option Addendum located at the end of this
data sheet.
PACKAGE/ORDERING INFORMATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
1
2
3
6
5
4
OUT
V
IN+
V+
REF
IN
A
SOT23-6
TLV3011AIDBV
1
2
3
6
5
4
OUT
V
IN+
V+
REF
IN
A
SOT23-6
TLV3012AIDBV
1
2
3
6
5
4
V+
REF
IN
OUT
V
IN+
SC70-6
TLV3011AIDCK
A
1
2
3
6
5
4
V+
REF
IN
OUT
V
IN+
SC70-6
TLV3012AIDCK
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TLV3012AIDBVT | 功能描述:校驗(yàn)器 IC Nanopower 1.8V Push-Pull RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補(bǔ)償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應(yīng)時(shí)間: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLV3012AIDBVTG4 | 功能描述:校驗(yàn)器 IC Nanopower 1.8V Push-Pull RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補(bǔ)償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應(yīng)時(shí)間: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLV3012AIDCKR | 功能描述:校驗(yàn)器 IC Nanopower 1.8V Push-Pull RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補(bǔ)償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應(yīng)時(shí)間: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLV3012AIDCKRG4 | 功能描述:校驗(yàn)器 IC Nanopower 1.8V Push-Pull RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補(bǔ)償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應(yīng)時(shí)間: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLV3012AIDCKT | 功能描述:校驗(yàn)器 IC Nanopower 1.8V Push-Pull RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補(bǔ)償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應(yīng)時(shí)間: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
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