參數(shù)資料
型號(hào): TM25CZ-24
元件分類: 晶閘管
英文描述: 39.25 A, 1200 V, SCR
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 65K
代理商: TM25CZ-24
Feb.1999
–1
10
–2
10
–3
10
0
10
1
10
0
10
1
10
0
10
4
10
3
10
2
10
1
10
–1
10
3
10
2
10
1
10
0
10
70
50
30
20
7
5
3
2
0
100
500
200
300
400
10
1
100
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
VGT=3.0V
IGT=
50mA
IFGM
=2.0A
PGM=5.0W
VFGM=10V
VGD=0.25V
PG(AV)=
0.50W
Tj=
25°C
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
1.0
0
7
5
3
2
0.3
0.5
0.7
0.9
0.1
0.5
7
5
3
2
7
5
3
2
7
5
3
2
1.0
1.5
2.0
2.5
Tj=125°C
0
025
10
5
15
20
50
10
20
30
40
θ=30°
60°
120°
90°
180°
θ
360°
130
80
020
25
510
15
90
100
110
120
θ=30° 60° 90° 120° 180°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
ON-ST
A
TE
CURRENT
(A)
SURGE
(NON-REPETITIVE)
ON-ST
A
TE
CURRENT
(A)
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
GA
TE
VOL
T
AGE
(V)
A
VERAGE
ON-ST
A
TE
POWER
DISSIP
A
TION
(W)
TRANSIENT
THERMAL
IMPEDANCE
C/
W)
CASE
TEMPERA
TURE
C)
TIME (s)
GATE CURRENT (mA)
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
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