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參數(shù)資料
| 型號： | TMD0507-2A |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER MMIC AMPLIFIER |
| 中文描述： | 微波功率MMIC放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 107K |
| 代理商： | TMD0507-2A |
MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR
TMD0507-2A
TECHNICAL DATA
FEAT URES
P1dB=33.0dBm at 5.1GHz to 7.2GHz
HIGH GAIN
HERMETICALLY SEALED PACKAGE
G1dB=22.0dB at 5.1GHz to 7.2GHz
HIGH POWER
BROAD BAND INTERNALLY MATCHED
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
V
DD
V
GG
P
in
T
f
T
stg
UNIT
RATING
Drain Supply Voltage
V
15
Gate Supply Voltage
V
-10
Input Power
dBm
°
C
°
C
20
Flange Temperature
-30
～
+80
-65
～
+175
Storage Temperature
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
P
1dB
CONDITION
UNIT
MIN. TYP.
MAX.
Output Power at 1dB
Compression Point
dBm
32.0
33.0
Power Gain at 1dB
Compression Point
G
1dB
dB
20.0
22.0
Gain Flatness (1)*
Δ
G1
Δ
G2
dB
1.7
±
2.0
±
1.5
Gain Flatness (2)**
dB
Drain Current***
I
DD
A
2.0
Input VSWR
*
Δ
G1 at f = 5.1 – 7.2GHz
**
Δ
G2 at f = 5.9 – 7.2GHz
*** I
DD
= I
DD1
+ I
DD2
+ I
DD3
VSWRin
V
DD1
=V
DD2
=V
DD3
= 10V
V
GG
= -5V
f
= 5.1 – 7.2GHz
3.0
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar. 2006
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