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參數(shù)資料
| 型號： | TMS4164-20NL |
| 英文描述： | x1 Page Mode DRAM |
| 中文描述： | x1頁面模式的DRAM |
| 文件頁數(shù)： | 17/25頁 |
| 文件大小： | 437K |
| 代理商： | TMS4164-20NL |
TMS416100, TMS416100P
16777216-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS611 – FEBRUARY 1994
17
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
Valid Out
Valid
Out
RAS
tRASP
tRP
CAS
A0 – A11
W
D
Q
tCP
tCRP
tCAH
tASC
tASR
tRAH
tAWD
tRCS
tWP
tCWD
tRWL
tCWL
tDH
tDS
Valid
Don’t Care
Valid
Don’t Care
Don’t Care
Column
Don’t Care
Column
Row
tCAC
tAA
tRAC
tCLZ
(see Note A)
tOFF
tCPA
tCSH
tRCD
tPRWC
tCAS
tRSH
(see Note A)
tRAD
tRWD
tCPW
tRHCP
NOTES: A. Output can go from 3-state to an invalid data state prior to the specified access time.
B. A read or write cycle can be intermixed with read-write cycles as long as the read and write timing specifications are not violated.
Figure 9. Enhanced-Page-Mode Read-Write-Cycle Timing
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