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參數(shù)資料
| 型號： | TMS416400-60DZ |
| 英文描述： | x4 Fast Page Mode DRAM |
| 中文描述： | x4快速頁面模式的DRAM |
| 文件頁數(shù)： | 6/25頁 |
| 文件大?。?/td> | 437K |
| 代理商： | TMS416400-60DZ |
TMS416100, TMS416100P
16777216-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS611 – FEBRUARY 1994
6
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range (see Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short-circuit output current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
– 1 V to 7 V
– 1 V to 7 V
50 mA
1 W
0
°
C to 70
°
C
– 55
°
C to 125
°
C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values in this data sheet are with respect to VSS.
recommended operating conditions
MIN
4.5
NOM
MAX
5.5
UNIT
V
VCC
VIH
VIL
TA
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used in this data sheet for logic
voltage levels only.
Supply voltage
5
High-level input voltage
2.4
6.5
V
Low-level input voltage (see Note 2)
–1
0.8
V
Operating free-air temperature
0
70
C
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| TMS416400-70DZ | x4 Fast Page Mode DRAM |
| TMS416400-80DZ | x4 Fast Page Mode DRAM |
| TMS4164-12FPL | x1 Page Mode DRAM |
| TMS4164-12NL | x1 Page Mode DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS416400-70DZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| TMS416400-80DZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| TMS416400A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS416400ADJ | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS416400P | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
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