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參數(shù)資料
| 型號： | TMS416400-70DZ |
| 英文描述： | x4 Fast Page Mode DRAM |
| 中文描述： | x4快速頁面模式的DRAM |
| 文件頁數(shù)： | 8/25頁 |
| 文件大?。?/td> | 437K |
| 代理商： | TMS416400-70DZ |
TMS416100, TMS416100P
16777216-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS611 – FEBRUARY 1994
8
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 6)
PARAMETER
MIN
MAX
UNIT
Ci(A)
Ci(D)
Ci(RC)
Ci(W)
Co
NOTE 6: VCC = 5 V
±
0.5 V, and the bias on pins under test is 0 V.
Input capacitance, address inputs
5
pF
Input capacitance, data inputs
5
pF
Input capacitance, strobe inputs
7
pF
Input capacitance, write-enable input
7
pF
Output capacitance
7
pF
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
’416100-60
’416100P-60
’416100-70
’416100P-70
’416100-80
’416100P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tAA
tCAC
tCPA
tRAC
tCLZ
tOH
tOFF
NOTE 7: tOFF is specified when the output is no longer driven.
Access time from column address
30
35
40
ns
Access time from CAS low
15
18
20
ns
Access time from column precharge
35
40
45
ns
Access time from RAS low
60
70
80
ns
CAS to output in low-impedance state
0
0
0
ns
Output disable time, start of CAS high
3
3
3
ns
Output disable time after CAS high (see Note 7)
0
15
0
18
0
20
ns
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PDF描述 |
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| TMS416400-80DZ | x4 Fast Page Mode DRAM |
| TMS4164-12FPL | x1 Page Mode DRAM |
| TMS4164-12NL | x1 Page Mode DRAM |
| TMS4164-15FPL | x1 Page Mode DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS416400-80DZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| TMS416400A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS416400ADJ | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS416400P | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416409A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
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