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參數(shù)資料
| 型號： | TN12 |
| 廠商： | 意法半導體 |
| 英文描述： | SENSITIVE & STANDARD(12A SCRs) |
| 中文描述： | 敏感 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 122K |
| 代理商： | TN12 |
TN12, TS12 and TYNx12 Series
5/11
Figure 9: Relative variation of dV/dt immunity
versus
gate-cathode
values) for TS8 series
resistance
(typical
Figure 10: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values) for TS8 series
Figure 11: Surge peak on-state current versus
number of cycles
Figure 12: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I2t
Figure 13: On-state characteristics (maximum
values)
Figure 14: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed circuit board FR4, copper
thickness: 35μm) (DPAK and D
2
PAK)
0
200
400
600
800
1000
1200
0.1
1.0
10.0
R
(k )
GK
dV/dt[R
] / dV/dt[
GK
=220 ]
R
GK
T
= 125°C
V = 0.67 x V
DRM
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
C
(nF)
GK
dV/dt[C
] / dV/dt[
GK
=220 ]
R
GK
T
V = 0.67 x V
= 125°C
R
GK
= 220
D
DRM
j
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
I
(A)
TSM
Number of cycles
Non repetitive
T initial=25°C
Repetitive
T =105°C
TS12
TN12 / TYN12
t =10ms
p
One cycle
0.01
0.10
1.00
10.00
10
100
1000
2000
I
(A), I t (A s)
TSM
2
2
t (ms)
I t
2
I
TSM
T initial = 25°C
j
TS12
TS12
TN12 / TYN12
TN12 / TYN12
dI/dt limitation
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
200
I
(A)
TM
V
(V)
TM
T
j
=max
T=25°C
V =0.85V
R =30m
T max.:
t0
0
2
4
6
8
10
12
14
16
18
20
0
20
40
60
80
100
S(cm2)
R
(°C/W)
th(j-a)
DPAK
D PAK
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN1215-1000B-TR | SENSITIVE & STANDARD(12A SCRs) |
| TN1215-1000H-TR | SENSITIVE & STANDARD(12A SCRs) |
| TN1215-600B-TR | SENSITIVE & STANDARD(12A SCRs) |
| TN1215-600G | SCR |
| TN1215-600H | SENSITIVE & STANDARD(12A SCRs) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN12.29 | 制造商:TEKO 功能描述: 制造商:TEKO 功能描述:ENCLOSURE TEKNET BLACK/GREY 制造商:TEKO 功能描述:ENCLOSURE, TEKNET, BLACK/GREY |
| TN12.29-AL | 制造商:OKW ENCLOSURES INC 功能描述:ENCLOSURE, ABS, BLACK/GRAY, 6.102 X 3.78 X .953 |
| TN12_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Sensitive and Standard 12 A SCRS |
| TN1205H-6G | 功能描述:SCR 12A High Temp SCR 600V Vdrm 2 to 5mA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TN1205H-6G-TR | 功能描述:SCR High Temp 12A SCR 600V 2 to 5 mA IGT RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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