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參數(shù)資料
| 型號(hào)： | TN2106 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V，低門限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS（60V的擊穿電壓，2.0V的低門限，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | TN2106 |
7-72
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.36W
0.74W
θ
jc
°
C/W
200
125
θ
ja
°
C/W
350
170
I
DR
*
I
DRM
TO-236AB
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
0.28A
0.30A
0.8A
1.0A
0.28A
0.30A
0.8A
1.0A
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
60
V
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
I
D
= 1mA, V
GS
= V
DS
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
= 500mA
Gate Threshold Voltage
0.6
2.0
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-3.8
-5.5
mV/
°
C
0.1
100
nA
Zero Gate Voltage Drain Current
1
μ
A
μ
A
100
I
D(ON)
R
DS(ON)
ON-State Drain Current
0.6
A
5.0
2.5
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.70
1.0
%/
°
C
150
400
m
Input Capacitance
35
50
Common Source Output Capacitance
17
25
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Reverse Transfer Capacitance
7
8
Turn-ON Delay Time
3
5
Rise Time
5
8
Turn-OFF Delay Time
6
9
Fall Time
5
8
Diode Forward Voltage Drop
1.2
1.8
V
I
SD
= 0.5A, V
GS
= 0V
I
SD
= 0.5A, V
GS
= 0V
Reverse Recovery Time
400
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
DD
= 25V
I
D
= 0.5A
R
GEN
= 25
ns
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Static Drain-to-Source
ON-State Resistance
TN2106
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| TN2106N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN2106_03 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2106K1 | 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2106K1-G | 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2106N3 | 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2106N3-G | 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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