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參數(shù)資料
| 型號： | TN2124N8 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 0.23 A, 240 V, 15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA |
| 封裝： | SAME AS SOT-89, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | TN2124N8 |
1
TN2124
08/30/99
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and
other Supertex products, refer to the Supertex 1998 Databook.
TN2124
Low Threshold
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
BV
DSS
/
BV
DGS
240V
R
DS(ON)
(max)
V
GS(th)
(max)
TO-243AA**
TO-236AB*
15
2.0V
TN2124N8
TN2124K1
* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
** Prodcut supplied on 2000 piece carrier tape reels.
Order Number / Package
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1C
where
= 2-week alpha date code
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
TO-236AB
(SOT-23)
top view
Gate
Source
Drain
TO-243AA
(SOT-89)
G
D
S
D
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參數(shù)描述 |
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