- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385942 > TN2535N8 (SUPERTEX INC) N-Channel Enhancement-Mode Vertical DMOS FETs PDF資料下載
參數(shù)資料
| 型號： | TN2535N8 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 0.283 A, 350 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA |
| 封裝： | SAME AS SOT-89, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 495K |
| 代理商： | TN2535N8 |
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Thermal Characteristics
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
1.6W
θ
jc
°
C/W
θ
ja
°
C/W
78
I
DR
*
I
DRM
TO-243AA
283mA
1.6A
15
283mA
1.6A
*
I
(continuous) is limited by max rated T
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
350
V
V
GS
= 0V, I
D
= 250
μ
A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.0
mV/
°
C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
±
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1.0
μ
A
V
GS
= 0V, V
DS
= Max Rating
I
D(ON)
ON-State Drain Current
0.5
A
V
GS
= 4.5V, V
DS
= 25V
1.0
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
15
V
GS
= 3.0V, I
D
= 20mA
10
V
GS
= 4.5V, I
D
= 100mA
10
V
GS
= 10V, I
D
= 200mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.75
%/
°
C
V
GS
= 10V, I
D
= 200mA
G
FS
Forward Transconductance
125
m
V
DS
= 25V, I
D
= 100mA
C
ISS
C
OSS
C
RSS
Input Capacitance
125
Common Source Output Capacitance
70
pF
Reverse Transfer Capacitance
25
t
d(ON)
t
r
t
d(OFF)
t
f
Turn-ON Delay Time
20
V
DD
= 25V,
I
D
= 200mA,
R
GEN
= 25
Rise Time
15
ns
Turn-OFF Delay Time
25
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= 0V, I
SD
= 200mA
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= 200mA
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
TN2535
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN2640 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2640K4 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2640LG | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2640N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2640ND | N-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN2535N8-G | 功能描述:MOSFET 350V 10Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2540 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2540_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET |
| TN2540-1000G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:25A SCRS |
| TN2540-1000GTR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:25A SCRs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。