參數(shù)資料
型號(hào)： TN2640LG
廠(chǎng)商： SUPERTEX INC
元件分類(lèi)： 功率晶體管
英文描述： N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述： 260 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝： SO-8
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 461K
代理商： TN2640LG
2
TN2640
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-92
220mA
2.0A
125
170
220mA
2.0A
SO-8
260mA
2.0A
1.3W
24
96
260mA
2.0A
DPAK
500mA
3.0A
2.5W
6.25
50
500mA
3.0A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
400
V
V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.8
2.0
V
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5.0V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
= 100mA
Change in V
GS(th)
with Temperature
Gate Body Leakage
-2.5
-4.0
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
1.0
mA
I
D(ON)
ON-State Drain Current
1.5
3.5
2.0
4.0
R
DS(ON)
3.2
5.0
3.0
5.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.75
%/
°
C
200
330
m
Input Capacitance
180
225
Common Source Output Capacitance
35
70
pF
Reverse Transfer Capacitance
7.0
25
Turn-ON Delay Time
4.0
15
Rise Time
15
20
Turn-OFF Delay Time
20
25
Fall Time
22
27
Diode Forward Voltage Drop
0.9
V
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 1.0A
Reverse Recovery Time
300
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Drain-to-Source
Breakdown Voltage
V
GS
= 0V, V
DS
= 25V
f = 1.0 MHz
V
DD
= 25V,
I
D
= 2.0A,
R
GEN
= 25
ns
Static Drain-to-Source
ON-State Resistance
相關(guān)PDF資料
PDF描述
TN2640N3 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2640ND N-Channel Enhancement-Mode Vertical DMOS FETs
TN4-25702 D38 - CONNECTOR ACCESSORY
TN5325 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓250V，低門(mén)限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
TN5325 CONNECTOR ACCESSORY
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