參數(shù)資料
型號: TNY268PG
英文描述: 4-23 W TinySwitch-II family of energy efficient.
中文描述: 4-23糯的TinySwitch -Ⅱ系列高效的能源。
文件頁數(shù): 2/24頁
文件大小: 200K
代理商: TNY268PG
2
C
4/03
TNY264/266-268
Figure 2. Functional Block Diagram.
Figure 3. Pin Configuration.
Pin Functional Description
DRAIN (D) Pin:
Power MOSFET drain connection. Provides internal operating
current for both start-up and steady-state operation.
BYPASS (BP) Pin:
Connection point for a 0.1
μ
F external bypass capacitor for the
internally generated 5.8 V supply.
ENABLE/UNDER-VOLTAGE (EN/UV) Pin:
This pin has dual functions: enable input and line under-voltage
sense. During normal operation, switching of the power
MOSFET is controlled by this pin. MOSFET switching is
terminated when a current greater than 240
μ
A is drawn from
this pin. This pin also senses line under-voltage conditions
through an external resistor connected to the DC line voltage.
If there is no external resistor connected to this pin,
TinySwitch-II
detects its absence and disables the line under-
voltage function.
SOURCE (S) Pin:
Control circuit common, internally connected to output
MOSFET source.
SOURCE (HV RTN) Pin:
Output MOSFET source connection for high voltage return.
PI-2643-030701
CLOCK
OSCILLATOR
5.8 V
4.8 V
SOURCE
(S)
S
R
Q
DCMAX
BYPASS
(BP)
+
-
VILIMIT
FAULT
PRESENT
CURRENT LIMIT
COMPARATOR
ENABLE
LEADING
EDGE
BLANKING
THERMAL
SHUTDOWN
+
-
DRAIN
(D)
REGULATOR
5.8 V
BYPASS PIN
UNDER-VOLTAGE
1.0 V + VT
ENABLE/
UNDER-
VOLTAGE
(EN/UV)
Q
240
μ
A
50
μ
A
LINE UNDER-VOLTAGE
RESET
AUTO-
RESTART
COUNTER
JITTER
1.0 V
6.3 V
CURRENT
LIMIT STATE
MACHINE
PI-2685-101600
EN/UV
D
S
S
S (HV RTN)
S (HV RTN)
BP
P Package (DIP-8B)
G Package (SMD-8B)
8
5
7
1
4
2
3
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