參數(shù)資料
型號： TP0202T-T1
英文描述： TRANSISTOR SOT23 SMD MOSFET
中文描述： 晶體管SOT23封裝貼片MOSFET的
文件頁數(shù)： 1/4頁
文件大?。?/td> 51K
代理商： TP0202T-T1
TP0202T
Siliconix
S-44505—Rev. E, 06-Sep-94
1
P-Channel Enhancement-Mode MOS Transistor
Product Summary
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
–20
1.4 @ V
GS
= –10 V
3.5 @ V
GS
= –4.5 V
–1.3 to – 3 V
–0.31
–1.3 to – 3 V
–0.16
For applications information see AN804.
Features
High-Side Switching
Low On-Resistance: 0.9
Low Threshold: –2.1 V
Fast Switching Speed: 18 ns
Low Input Capacitance: 55 pF
Benefits
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
Applications
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
*Marking Code for TO-236
TP0202T (P3)*
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–20
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150 C)
T
A
=
I
D
–0.31
T
A
=
–0.25
A
Pulsed Drain Current
a
I
DM
–0.75
Power Dissipation
T
A
=
P
D
0.2
W
T
A
=
0.128
Maximum Junction-to-Ambient
R
thJA
625
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #2812.
Applications information may also be obtained via FaxBack, request document #9804.
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