參數(shù)資料
型號(hào)： TP0606
廠(chǎng)商： ELAN Microelctronics Corp .
英文描述： P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-60V，低門(mén)限2.4V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
中文描述： P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管（擊穿電壓- 60V的低門(mén)限為2.4V，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 26K
代理商： TP0606
7-116
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
-0.5A
-3.5A
-0.5A
-3.5A
TP0606
Thermal Characteristics
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Symbol
BV
DSS
Parameter
Min
Typ
Max
Unit
Conditions
-60
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
-1.0
-2.4
-5.0
-100
-10
-1.0
V
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5V, I
D
= -250mA
V
GS
= -10V, I
D
= -0.75A
V
GS
= -10V, I
D
= -0.75A
V
DS
= -25V, I
D
= -0.75A
mV/
°
C
nA
μ
A
mA
I
D(ON)
ON-State Drain Current
-0.4
-1.5
-0.6
-2.5
5.0
3.0
R
DS(ON)
7.0
3.5
1.7
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
%/
°
C
m
300
400
80
50
15
150
85
35
10
15
20
15
-1.8
pF
V
ns
V
GS
= 0V, I
SD
= -1.0A
V
GS
= 0V, I
SD
= -1.0A
300
A
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
DD
= -25V
I
D
= -1.0A
R
GEN
= 25
ns
V
V
GS
= 0V, I
D
= -2.0mA
Drain-to-Source Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
相關(guān)PDF資料
PDF描述
TP0606 CONNECTOR ACCESSORY
TP0606N3 CONNECTOR ACCESSORY
TP0620 CONNECTOR ACCESSORY
TP0620N3 CONNECTOR ACCESSORY
TP0702N3 CONNECTOR ACCESSORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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TP0606N3-G 功能描述:MOSFET 60V 3.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0606N3-G P002 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET
TP0606N3-G P003 制造商:Supertex Inc 功能描述:Trans MOSFET P-CH 60V 0.32A 3-Pin TO-92 T/R 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET
TP0606N3-G P005 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET
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