參數(shù)資料
型號(hào): TP2640LG-G
廠商: SUPERTEX INC
元件分類: 功率晶體管
英文描述: P- Channel Enhancement-Mode Vertical DMOS FETs
中文描述: 210 mA, 400 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: 4.90 X 3.90 MM, 1.75 MM HEIGHT, GREEN, SOIC-8
文件頁(yè)數(shù): 5/5頁(yè)
文件大小: 572K
代理商: TP2640LG-G
5
TP2635/TP2640
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html
.)
8-Lead SOIC Package Outline (LG)
45°
5° - 15°
(4 PLCS)
4.90 ± 0.10
1.27BSC
Side View
6.00 ± 0.20
3.90 ± 0.10
Notes:
1. All dimensions in millimeters. Angles in degrees.
2. If the corner is not chamfered, then a Pin 1 identifier
must be located within the area indicated.
Note 2
1.75 MAX
0.10 - 0.25
0.31 - 0.51
1.25 MIN
0.25 - 0.50
0° - 8°
0.40 - 1.27
0.17 - 0.25
Top View
End View
Note 2
1
8
3-Lead TO-92 Package Outline (N3)
1 2 3
Seating Plane
1
2
3
Front View
0.175 - 0.205
0.170 - 0.210
0.500 MIN
0.014 - 0.022
0.045 - 0.055
0.095 - 0.105
0.125 - 0.165
0.135 MIN
0.080 - 0.105
0.014 - 0.022
Side View
Bottom View
Notes:
All dimensions are in millimeters; all angles in degrees.
Doc.# DSFP-TP2635_TP2640
C032807
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TP2640N3 功能描述:MOSFET 400V 15Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP2640N3-G 功能描述:MOSFET 400V 15Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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TP2640N3-G P003 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET
TP2640N3-G P005 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET