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參數(shù)資料
| 型號(hào)： | TP5322_07 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 525K |
| 代理商： | TP5322_07 |
TP5322
General Description
The Supertex TP5322 is a low threshold enhancement-
mode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
3
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
3
Distance of 1.6mm from case for 10 seconds.
Ordering Information
Package Options
TO-236AB
1
TP5322K1
TP5322K1-G
-G indicates package is RoHS compliant (‘Green’)
Notes:
1
Same as SOT-23,
2
Same as SOT-89.
BV
DSS
/BV
DGS
R
(max)
V
(max)
I
(min)
TO-243AA
2
TP5322N8
TP5322N8-G
-220V
12Ω
-2.4V
-0.7A
P-Channel Enhancement-Mode
Vertical DMOS FETs
Pin Configurations
TO-243AA
(top view)
G
D
S
D
Product marking for TO-243AA:
where
= 2-week alpha date code
TP3C
Product marking for TO-236AB:
where
= 2-week alpha date code
P3C
TO-236AB
(Top View)
Gate
Source
Drain
Features
High input impedance
Low threshold
Low input capacitance
Fast switching speeds
Low on resistance
Low input and output leakage
Free from secondary breakdown
Complementary N- and P-channel devices
Applications
Logic level interfaces - ideal for TTL and CMOS
Battery operated systems
Photo voltaic devices
Analog switches
General purpose line drivers
Telecom switches
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP5322 | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5322K1 | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5322K1-G | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5322N8 | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5322N8-G | P-Channel Enhancement-Mode Vertical DMOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP5322K1 | 功能描述:MOSFET MOSFET PCh ENHANCE MODE -220V 12 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322K1-G | 功能描述:MOSFET 220V 12 Ohm 0.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322N8 | 功能描述:MOSFET MOSFET PCh ENHANCE MODE -220V 12 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322N8-G | 功能描述:MOSFET 220V 12 Ohm 0.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP-53312-3S | 制造商:ACME Electric 功能描述:THREE PHASE, 60 HZ , 480 DELTA PRIMARY VOLTS , 208Y/120 SECONDARY VOLTS, MAY BE |
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