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參數(shù)資料
| 型號： | TP5322 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 304K |
| 代理商： | TP5322 |
TP5322
Rev. 3 September 14, 2004
2
Thermal Characteristics
Package
I
D
(continuous)
I
D
(pulsed)
Power Dissipation @
T
A
= 25°C
1.6W
0.36W
θ
JC
°C/W
15
200
θ
JA
°C/W
78**
350
I
DR
*
I
DRM
TO-243AA
TO-236AB
*I
(continous) is limited by max rated Tj.
**Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substate.
Electrical Characteristics
(@25°C unless otherwise specified)
Symbol
Parameter
BV
DSS
Drain-to-Source
Breakdown Voltage
V
GS(th)
Gate Threshold Voltage
V
GS(th)
Change in V
GS(th)
with Temperature
I
GSS
Gate Body Leakage
I
DSS
Zero Gate Voltage Drain Current
-0.26A
-0.12A
-0.90A
-0.70A
-0.26A
-0.12A
-0.9A
-0.7A
Min
-220
Typ
Max
Units
V
Conditions
V
GS
= 0V, I
D
= -2mA
-1.0
-2.4
4.5
-100
-10
-1.0
V
V
GS
= V
DS
, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max
Rating, T
A
= 125°C
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -10V, I
D
= -200mA
V
GS
= -10V, I
D
= -200mA
V
DS
= -25V, I
D
= -200mA
V
GS
= 0V, V
DS
= -25V
f = 1MHz
mV/°C
nA
μA
mA
I
D(ON)
R
DS(ON)
On-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
-0.7
100
-0.95
10
8.0
250
300
A
15
12
1.7
110
45
20
10
15
20
15
-1.8
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300μs pulse at 2% duty cycle.)
2) All AC parameters sample tested.
Switching Waveforms and Test Circuit
0V
%/°C
mmho
pF
ns
V
DD
= -25V,
I
D
= -0.7A
R
GEN
= 25
V
ns
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
R
GEN
Input
Pulse
Generator
V
DD
R
L
D.U.T
OUTPUT
-10V
0V
V
DD
t
d(OFF)
Input
Output
t
r
t
f
t
d(ON)
t
(ON)
t
(OFF)
Doc.# DSFP-TP5322 A042005
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| TP5322_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP5322K1 | 功能描述:MOSFET MOSFET PCh ENHANCE MODE -220V 12 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322K1-G | 功能描述:MOSFET 220V 12 Ohm 0.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322N8 | 功能描述:MOSFET MOSFET PCh ENHANCE MODE -220V 12 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322N8-G | 功能描述:MOSFET 220V 12 Ohm 0.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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