參數(shù)資料
型號: TPA711DR
元件分類: 運動控制電子
英文描述: Single Audio Amplifier
中文描述: 單音頻放大器
文件頁數(shù): 21/32頁
文件大?。?/td> 522K
代理商: TPA711DR
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230C
NOVEMBER 1998
REVISED APRIL 2001
21
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
bridged-tied load versus single-ended mode (continued)
For example, a 68-
μ
F capacitor with an 8-
speaker would attenuate low frequencies below 293 Hz. The BTL
configuration cancels the dc offsets, which eliminates the need for the blocking capacitors. Low-frequency
performance is then limited only by the input network and speaker response. Cost and PCB space are also
minimized by eliminating the bulky coupling capacitor.
RL
CC
VO(PP)
VO(PP)
VDD
3 dB
fc
Figure 49. Single-Ended Configuration and Frequency Response
Increasing power to the load does carry a penalty of increased internal power dissipation. The increased
dissipation is understandable considering that the BTL configuration produces 4
×
the output power of the SE
configuration. Internal dissipation versus output power is discussed further in the
thermal considerations
section.
BTL amplifier efficiency
Linear amplifiers are notoriously inefficient. The primary cause of these inefficiencies is voltage drop across the
output stage transistors. There are two components of the internal voltage drop. One is the headroom or dc
voltage drop that varies inversely to output power. The second component is due to the sinewave nature of the
output. The total voltage drop can be calculated by subtracting the RMS value of the output voltage from V
DD
.
The internal voltage drop multiplied by the RMS value of the supply current, I
DD
rms, determines the internal
power dissipation of the amplifier.
An easy-to-use equation to calculate efficiency starts out being equal to the ratio of power from the power supply
to the power delivered to the load. To accurately calculate the RMS values of power in the load and in the
amplifier, the current and voltage waveform shapes must first be understood (see Figure 50).
V(LRMS)
VO
IDD
IDD(RMS)
Figure 50. Voltage and Current Waveforms for BTL Amplifiers
相關(guān)PDF資料
PDF描述
TPC8007-H TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 13A I(D) | SO
TPC8012-H TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1.8A I(D) | SO
TPC8013-H TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 15A I(D) | SO
TPC8015-H TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 13A I(D) | SO
TPD11DIL ****GESTRICHEN****
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