參數(shù)資料
型號(hào)： TPC8105-H
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 475K
代理商： TPC8105-H
TPC8105-H
2002-01-18
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U
MOSII)
TPC8105
H
High Speed and High Efficiency DC
DC Converters
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
z
Small footprint due to small and thin package
z
High speed switching
z
Small gate charge
: Qg = 32 nC (typ.)
z
Low drain
source ON resistance : R
DS
(ON)
= 20 m
(typ.)
z
High forward transfer admittance : |Y
fs
| =
1
2 S (typ.)
z
Low leakage current : I
DSS
=
1
0 μA (max) (V
DS
=
30 V)
z
Enhancement
mode : V
th
=
0.8~
2.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
= 20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±20
V
DC
(Note 1)
I
D
7
Drain current
Pulse (Note 1)
I
DP
28
A
Drain power dissipation
(t = 10 s)
(Note 2a)
P
D
2.4
W
Drain power dissipation
(t = 10 s)
(Note 2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
63.7
mJ
Avalanche current
I
AR
7
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.24
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
相關(guān)PDF資料
PDF描述
TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
TPC8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPC8105-H(TE12L) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 30V 7A 8-Pin SOP T/R
TPC8106-H 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:SILICON P CHANNEL MOS TYPE
TPC8107 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8107(TE12L) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 30V 13A 8-Pin SOP T/R
TPC8107(TE12L,Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 30V 13A 8-Pin SOP T/R 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 30V 13A 8SOP - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, MOS, FET, TOSH, SOP8, Pc
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*