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參數(shù)資料
| 型號： | TPC8402 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII) |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 719K |
| 代理商： | TPC8402 |
TPC8402
2002-05-07
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
125
Single-device operation
(Note 3a)
R
th (ch-a) (1)
167
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
278
°C/W
Marking
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4:
a) V
DD
=
24 V, T
ch
= 25°C (Initial), L = 1.0 mH, R
G
= 25
, I
AR
=
4.5 A
b) V
DD
= 24 V, T
ch
= 25°C (Initial), L = 1.0 mH, R
G
= 25
, I
AR
= 5.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6:
on lower left of the marking indicates Pin 1.
*
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
*
Type
TPC8402
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(b)
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