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參數(shù)資料
| 型號： | TPCP8402 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) |
| 中文描述： | 東芝場效應(yīng)晶體管硅P，?頻道馬鞍山型（U型馬鞍山四/ U型馬鞍山三） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 162K |
| 代理商： | TPCP8402 |
TPCP8402
2003-09-26
3
P-ch
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
16 V, V
DS
=
0 V
V
DS
=
30 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
20 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
4.5 V, I
D
=
1.7 A
V
GS
=
10 V, I
D
=
1.7 A
V
DS
=
10 V, I
D
=
1.7 A
±
10
μ
A
Drain cut-off current
I
DSS
10
μ
A
V
(BR) DSS
30
Drain-source breakdown voltage
V
(BR) DSX
15
V
Gate threshold voltage
V
th
0.8
2.0
V
80
105
Drain-source ON resistance
R
DS (ON)
60
72
m
Forward transfer admittance
|Y
fs
|
3.0
6.0
S
Input capacitance
C
iss
600
Reverse transfer capacitance
C
rss
60
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
70
pF
Rise time
t
r
5.3
Turn-on time
t
on
12
Fall time
t
f
8.4
Switching time
Turn-off time
t
off
Duty
<
1%, t
w
=
10
μ
s
34
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
14
Gate-source charge 1
Q
gs1
1.4
Gate-drain (“miller”) charge
Q
gd
V
DD
～
24 V, V
GS
=
10 V,
I
D
=
3.4 A
2.7
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
13.6
A
Forward voltage (diode)
V
DSF
I
DR
=
3.4 A, V
GS
=
0 V
1.2
V
R
L
=
V
DD
～
15 V
10
V
V
GS
0 V
4
I
D
=
1.7 A
V
OUT
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參數(shù)描述 |
|---|---|
| TPCP8402(TE85L,F) | 功能描述:MOSFET N-Ch P-Ch 30V 4.2A -30V -3.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCP8402(TE85L,F,M | 功能描述:MOSFET MOSFET N-Ch P-Ch 30V 4.2 3.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCP8402_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) |
| TPCP8404 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS) |
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