參數(shù)資料
型號： TPIC0108
廠商： Texas Instruments, Inc.
英文描述： PWM CONTROL INTELLIGENT H-BRIDGE
中文描述： PWM控制智能H橋
文件頁數(shù)： 5/14頁
文件大?。?/td> 205K
代理商： TPIC0108
TPIC0108B
PWMCONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating case temperature and supply voltage
ranges (unless otherwise noted) (see Note 2)
PARAMETER
TEST CONDITIONS
VCC = 6 V to 9 V
VCC = 9 V to 18 V
VCC = 6 V to 9 V
VCC = 9 V to 18 V
VCC = 6 V to 9 V
VCC = 9 V to 18 V
VCC = 6 V to 9 V
VCC = 9 V to 18 V
VCC = 13.2 V
MIN
TYP
MAX
380
UNIT
TJ= 25
TJ = 25
°
C
LSD
280
340
m
TJ= 150
TJ = 150
°
C
620
rDS(on)
Static drain-source on-resistance
(per transistor) IBR = 1 A
400
560
TJ= 25
TJ = 25
°
C
430
HSD
280
340
m
TJ= 150
TJ = 150
°
C
640
400
560
I(QB)
I(QCD)
TSDS
TSDD
Quiescent battery current
TJ = 25
°
C
20
μ
A
mA
°
C
°
C
Open circuit detection current
10
40
100
Static thermal shutdown temperature
See Notes 3 and 4
140
Dynamic thermal shutdown temperature
See Notes 3 and 5
160
ICS
Current shutdown limit
VCC = 6 V to 9 V
VCC = 9 V to 18 V
TJ = 125
°
C, Operating lifetime 10,000 hours,
(see Figure 1)
4.8
7.5
A
5
7.5
I(CON)
Continuous bridge current
3
A
V(OVCC)
V(STL)
V(ST2H)
I(ST(OFF))
VIL
VIH
VI
IIH
NOTES:
Over voltage detection on VCC
STATUS low output voltage
27
36
V
IO = 100
μ
A
IO = 20
μ
A
V(ST) = 5 V
0.8
V
STATUS2 high output voltage
3.9
5.4
V
μ
A
V
STATUS output leakage current
5
Low level logic input voltage
–0.3
0.8
High level logic input voltage
3.6
7
V
Hysteresis of input voltage
0.3
V
μ
High level logic input current
VIH = 3.5 V
2
10
50
2. The device functions according to the function table for VCC between 18 V and V(OVCC), but only up to a maximum supply voltage
of 33 V (no parameters specified). Exposure beyond 18 V for extended periods may affect device reliability.
3. Exposure beyond absolute-maximum-rated condition of junction temperature may affect device reliability.
4. No temperature gradient between DMOS transistor and temperature sensor.
5. With temperature gradient between DMOS transistor and temperature sensor in a typical application (DMOS transistor as heat
source).
switching characteristics over recommended operating case temperature and supply voltage
ranges (unless otherwise noted)
PARAMETER
High-side driver turn-on time
TEST CONDITIONS
MIN
TYP
MAX
100
UNIT
tout(on)
VDS(on)<1 V at 1 A,
VCC= 13 2 V
VCC = 13.2 V
μ
s
Low-side driver turn-on time
Slew rate, low-to-high sinusoidal (
δ
V/
δ
t)
Slew rate, high-to-low sinusoidal (
δ
V/
δ
t)
100
SR
VCC= 13 2 V
VCC = 13.2 V,
IO= 1 A resistive load
IO = 1 A resistive load
1
6
V/
μ
s
1
6
td(QCD)
Under current spike duration to trigger
open circuit detection
VCC = 5 V to 18 V
1
10
ms
td(CS)
Delay time for over current shutdown
5
10
25
μ
s
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