參數(shù)資料
型號(hào): TPR400
廠商: Electronic Theatre Controls, Inc.
英文描述: 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
中文描述: 400瓦,50伏特,脈沖航空電子1030年至1090年兆赫
文件頁數(shù): 1/3頁
文件大小: 271K
代理商: TPR400
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TPR 400
400 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The TPR 400 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55CX, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 875 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 30 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1030-1090 MHz
Vcc = 50 Volts
PW = 10
μ
sec
DF = 1%
F = 1090 MHz
400
Watts
Watts
dB
%
75
7.27
40
20:1
BVebo
BVces
h
FE
θ
jc
2
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 20 mA
Ic = 25 mA
Ic = 2.5 A, Vce = 5 V
4.0
55
10
Volts
Volts
100
0.2
C/W
o
Issue B, February 1998
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