參數(shù)資料
型號(hào)： TPS1101DW
廠商： Texas Instruments, Inc.
英文描述： CONNECTOR ACCESSORY
中文描述： 連接器附件
文件頁數(shù)： 1/10頁
文件大?。?/td> 161K
代理商： TPS1101DW
TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Low r
DS(on)
. . . 0.09
Typ at V
GS
= –10 V
3 V Compatible
Requires No External V
CC
TTL and CMOS Compatible Inputs
V
GS(th)
= –1.5 V Max
Available in Ultrathin TSSOP Package (PW)
ESD Protection Up to 2 kV per
MIL-STD-883C, Method 3015
description
The TPS1101 is a single, low-r
DS(on)
, P-channel,
enhancement-mode MOSFET. The device has
been optimized for 3-V or 5-V power distribution
in battery-powered systems by means of the
Texas Instruments LinBiCMOS
process. With a
maximum V
GS(th)
of –1.5 V and an I
DSS
of only
0.5
μ
A, the TPS1101 is the ideal high-side switch
for low-voltage, portable battery-management
systems where maximizing battery life is a primary
concern. The low r
DS(on)
and excellent ac
characteristics (rise time 5.5 ns typical) of the
TPS1101 make it the logical choice for
low-voltage switching applications such as power
switches for pulse-width-modulated (PWM)
controllers or motor/bridge drivers.
The ultrathin thin shrink small-outline package or
TSSOP (PW) version fits in height-restricted
places where other P-channel MOSFETs cannot.
The size advantage is especially important where
board height restrictions do not allow for an
small-outline integrated circuit (SOIC) package.
Such applications include notebook computers,
personal digital assistants (PDAs), cellular
telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other
P-channel MOSFETs in SOIC packages.
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP FORM
(Y)
TJ
SMALL OUTLINE
(D)
TSSOP
(PW)
–40
°
C to 150
°
C
The D package is available taped and reeled. Add an R suffix to device type (e.g.,
TPS1101DR). The PW package is only available left-end taped and reeled (indicated by
the LE suffix on the device type; e.g., TPS1101PWLE). The chip form is tested at 25
°
C.
TPS1101D
TPS1101PWLE
TPS1101Y
Copyright
1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinBiCMOS is a trademark of Texas Instruments Incorporated.
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SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
D PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
GATE
NC
NC
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
NC
PW PACKAGE
(TOP VIEW)
NC – No internal connection
D PACKAGE
PW PACKAGE
相關(guān)PDF資料
PDF描述
TPS1101PW CONNECTOR ACCESSORY
TPS1101Y CONNECTOR ACCESSORY
TPS1101YDW CONNECTOR ACCESSORY
TPS1120YD CONNECTOR ACCESSORY
TPS1120Y CONNECTOR ACCESSORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPS1101PW 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101PWLE 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101PWR 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPS1101PWRG4 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPS1101Y 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
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