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參數(shù)資料
| 型號： | TPS1101Y |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 161K |
| 代理商： | TPS1101Y |
TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at T
J
= 25
°
C (unless otherwise noted)
static
PARAMETER
TEST CONDITIONS
TPS1101
TYP
TPS1101Y
MIN
UNIT
MIN
MAX
TYP
MAX
VGS(th)
Gate-to-source
threshold voltage
VDS = VGS,
ID = –250
μ
A
–1
–1.25
–1.5
–1.25
V
VSD
Source-to-drain voltage
(diode-forward voltage)
IS = –1 A,
VGS = 0 V
–1.04
–1.04
V
IGSS
Reverse gate current,
drain short circuited to
source
VDS = 0 V,
VGS = –12 V
±
100
nA
IDSS
Zero-gate-voltage drain
current
VDS=
VDS = –12 V,
VGS= 0 V
VGS = 0 V
TJ = 25
°
C
TJ = 125
°
C
–0.5
μ
A
–10
VGS = –10 V
VGS = –4.5 V
VGS = –3 V
VGS = –2.7 V
ID = –2.5 A
ID = –1.5 A
90
90
rDS(on)
Static drain-to-source
Static drain to source
on-state resistance
134
190
134
m
ID=
ID = –0.5 A
0 5 A
198
310
198
232
400
232
gfs
Forward
transconductance
VDS = –10 V,
ID = –2 A
4.3
4.3
S
Pulse test: pulse duration
≤
300
μ
s, duty cycle
≤
2%
dynamic
PARAMETER
TEST CONDITIONS
TPS1101, TPS1101Y
MIN
TYP
11.25
UNIT
MAX
Qg
Qgs
Qgd
td(on)
td(off)
tr
tf
trr(SD)
Total gate charge
Gate-to-source charge
VDS = –10 V,
VGS = –10 V,
ID = –1 A
1.5
nC
Gate-to-drain charge
2.6
Turn-on delay time
6.5
ns
Turn-off delay time
VDD = –10 V,
RG = 6
,
RL = 10
See Figures 1 and 2
ID = –1 A,
19
ns
Rise time
,
5.5
Fall time
Source-to-drain reverse recovery time
13
16
ns
IF = 5.3 A,
di/dt = 100 A/
μ
s
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