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參數(shù)資料
| 型號(hào)： | TPS1120Y |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 180K |
| 代理商： | TPS1120Y |
TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
10
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
THERMAL INFORMATION
The profile of the heat sinks used for thermal measurements is shown in Figure 14. Board type is FR4 with 1-oz copper
and 1-oz tin/lead (63/37) plate. Use of vias or through-holes to enhance thermal conduction was avoided.
Figure 15 shows a family of R
θ
JA
curves. The R
θ
JA
was obtained for various areas of heat sinks while subject to air
flow. Power remained fixed at 0.25 W per device or 0.50 W per package. This testing was done at 25
°
C.
As Figure 14 illustrates, there are two separated heat sinks for each package. Each heat sink is coupled to the lead
that is internally tied to a single MOSFET source and is half the total area, as shown in Figure 15. For example, if the
total area shown in Figure 15 is 4 cm
2
, each heat sink is 2 cm
2
.
1DRAIN
2DRAIN
1SOURCE
1GATE
2GATE
The Combined Area
of These Two Heat
Sinks Is 4 cm2
TPS1120D IC
HS: 4 cm2
8P SOIC Thermal Analysis
2 cm
2SOURCE
Figure 14. Profile of Heat Sinks
70
60
50
0
50
100
150
80
90
THERMAL RESISTANCE, JUNCTION-TO-AMBIENT
vs
AIRFLOW, 25
°
C
100
200
250
300
Airflow, 25
°
C – ft/min
Figure 15
110
120
–
J
R
θ
130
140
150
TJ = 25
°
C
P = 0.5 W
Heat Sink Areas
as Shown
°
0.5 cm2
1 cm2
2 cm2
4 cm2
0 cm2
8 cm2
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