參數(shù)資料
型號(hào)： TPS40055QPWPRQ1
廠商： TEXAS INSTRUMENTS INC
元件分類(lèi)： 穩(wěn)壓器
英文描述： SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16
封裝： PLASTIC, HTSSOP-16
文件頁(yè)數(shù)： 10/28頁(yè)
文件大?。?/td> 571K
代理商： TPS40055QPWPRQ1
www.ti.com
GAIN
180
°
90
°
270
°
PHASE
+ 1
1
0 dB
RBIAS
UDG02189
+
R1
R3
C3
C2
(optional)
C1
R2
7
8
VREF
VOUT
COMP
VFB
f
Z1 +
1
2p
R2
C1
(Hertz)
f
Z2 +
1
2p
R1
C3
(Hertz)
f
P1 +
1
2p
R2
C2
(Hertz)
f
P2 +
1
2p
R3
C3
(Hertz)
(25)
f
C +
1
2p
R1
C2
G
(Hertz)
(26)
AMOD(f) + AMOD
f
LC
f
C
2
and
G +
1
AMOD(f)
(27)
Minimum Load Resistance
R2
(MIN) +
V
C (max)
I
SOURCE (min)
+
3.5 V
2 mA
+ 1750 W
(28)
CALCULATING THE BOOST AN BP10 BYPASS CAPACITOR
C
BOOST +
Qg
DV
(Farads)
(29)
TPS40054-Q1, TPS40055-Q1, TPS40057-Q1
SLAS482A – AUGUST 2005 – REVISED NOVEMBER 2005
APPLICATION INFORMATION (continued)
Figure 13. Type III Compensation Configuration
Figure 14. Type III Compensation Gain and Phase
The poles and zeros for a Type III network are described in Equation 25.
The value of R1 is somewhat arbitrary, but influences other component values. A value between 50 k
and
100 k
usually yields reasonable values.
The unity gain frequency is described in Equation 26.
where G is the reciprocal of the modulator gain at fC.
The modulator gain as a function of frequency at fC, is described in Equation 27.
Care must be taken not to load down the output of the error amplifier with the feedback resistor, R2, that is too
small. The error amplifier has a finite output source and sink current, which must be considered when sizing R2.
Too small a value does not allow the output to swing over its full range.
The BOOST capacitance provides a local, low impedance source for the high-side driver. The BOOST capacitor
should be a good quality, high-frequency capacitor. The size of the bypass capacitor depends on the total gate
charge of the MOSFET and the amount of droop allowed on the bypass capacitor. The BOOST capacitance is
described in Equation 29.
The 10-V reference pin, BP10V provides energy for both the synchronous MOSFET and the high-side MOSFET
via the BOOST capacitor. Neglecting any efficiency penalty, the BP10V capacitance is described in Equation 30.
18
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