參數(shù)資料
型號: TPS51200DRCT
廠商: TEXAS INSTRUMENTS INC
元件分類: 模擬信號調(diào)理
英文描述: SPECIALTY ANALOG CIRCUIT, PDSO10
封裝: GREEN, PLASTIC, VSON-10
文件頁數(shù): 6/35頁
文件大?。?/td> 1131K
代理商: TPS51200DRCT
www.ti.com
-3
-1
-2
0
1
2
3
I
OUT – Output Current – A
730
700
720
760
740
750
790
770
780
V
O
U
T
O
u
tp
u
t
V
o
lt
a
g
e
m
V
85°C
V
IN = 3.3 V
0°C
-40°C
25°C
710
0°C
25°C
85°C
DDR3
-40°C
LDO Design Guidelines
SLUS812 – FEBRUARY 2008
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
Figure 6. DC Regulaltion
Figure 7. Transient
The minimum input to output voltage difference (headroom) decides the lowest usable supply voltage Gm-driven
to drive a certain load. For TPS51200, a minimum of 300 mV (VLDOINMIIN – VOMAX) is needed in order to
support a Gm driven sourcing current of 2 A based on a design of VIN = 3.3 V and COUT = 3 × 10F. Because the
TPS51200 is essentially a Gm driven LDO, its impedance characteristics are both a function of the 1/Gm and
RDS(on) of the sourcing MOSFET (see Figure 8). The current inflection point of the design is between 2 A and 3 A.
When ISRC is less than the inflection point, the LDO is considered to be operating in the Gm region; when ISRC is
greater than the inflection point but less than the overcurrent limit point, the LDO is operating in the RDS(on)
region. The maximum sourcing RDS(on) is 0.144 with VIN = 3.0 V and TJ = 125°C.
14
Copyright 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS51200
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