參數(shù)資料
型號(hào)： TPS535G4
英文描述： PHOTOVOLTAIC CELL FOR THERMOPILE DETECTION
中文描述： 光伏電池的熱電堆檢測(cè)
文件頁(yè)數(shù)： 9/16頁(yè)
文件大小： 231K
代理商： TPS535G4
TPS5300
IMVP MOBILE POWER SUPPLY CONTROLLER
SLVS334 – DECEMBER 2000
9
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature range, 0 < T
J
< 125
°
C,
V
IN
= 4.3 V – 28 V (see test circuits) (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Linear Regulator OUTPUT DRIVERs (IO, CLK) (see Note 4)
IO(srcLDODR)
Peak output current linear
Peak out ut current linear
regulator driver IO
VCC = 5 V,
VSENSE_IO = 0.9
×
V(REFIO)
(see Note 2)
134
mA
IO(sinkLDODR)
VCC = 5 V,
VSENSE_IO = 1.1
×
V(REFIO)
(see Note 2)
14
μ
A
Initial accuracy IO condition:
closed loop; linear regulator
VCC = 5 V, Vref = 1.5 V, IO = 1 A
VCC = 5 V, Vref = 1.5 V, IO = 1 A,
TJ = 25
°
C (see Note 2)
VCC = 5 V,
β
NPN
≥
15, 0
≤
ILoad
≤
2 A, (see Note 2)
5.5 V
≥
VCC
≥
4.5 V,
3 V
≤
VIN (IO)
≤
6 V, (see Note 2)
VCC = 5 V,
VSENSE_IO = 0.9
×
V(REFIO)
(see Note 2)
–1.65%
1.65%
V(CUM_ACC IO)
–1.5%
1.5%
V(Load Reg IO)
Load regulation IO
25
mV
V(IN Line Reg IO)
VIN line regulation IO
5
mV
IO(srcLDODR)
Peak output current regulator,
Peak out ut current regulator,
driver CLK
10
mA
IO(sinkLDODR)
VCC = 5 V,
VSENSE_IO = 1.1
×
V(REFIO)
(see Note 2)
14
μ
A
V(CUM_ACCCLK)
Initial accuracy CLK condi-
tion: closed loop
VCC = 5 V, Vref = 2.5 V, IO = 75 mA
–1.55%
1.55%
Linear regulator
VCC = 5 V, Vref = 2.5 V, IO = 75 mA,
TJ = 25
°
C, (see Note 2)
VCC = 5 V
β
NPN
≥
15, 0
≤
ILoad
≥
150 mA,
(see Note 2)
5.5 V
≥
VCC
≥
4.5 V,
3 V
≤
VIN (CLK)
≤
6 V, (see Note 2)
–1.5%
1.5%
V(LoadRegCLK)
Load regulation CLK
5
mV
VIN(LineRegCLK)
Line regulation CLK
5
mV
NOTES:
2. Ensured by design, not production tested.
4. The pulldown (sink) circuit of the high-side driver is a MOSFET transistor referenced to DRVGND. The driver circuits are bipolar
and MOSFET transistors in parallel. The peak output current rating is the combined current rating from the bipolar and MOSFET
transistors. The output resistance is the rds(on) of the MOSFET transistor when the voltage on the driver output is less than the
saturation voltage of the bipolar transistor.
P
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