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參數(shù)資料
| 型號： | TPT5610 |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR (PNP) |
| 中文描述： | 晶體管（進(jìn)步黨） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 33K |
| 代理商： | TPT5610 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TPT5610
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM:
1 W (Tamb=25
℃
)
Collector current
I
CM:
-1 A
Collector-base voltage
V
(BR)CBO
: -25 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-
10
μA, I
E
=0
-25
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-
1
mA, I
B
=0
-20
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-
10
μA, I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-
20
V, I
E
=0
-1
μA
Emitter cut-off current
I
EBO
V
EB
=-
5
V, I
C
=0
-1
μA
DC current gain
h
FE
V
CE
=-
2
V, I
C
=-
500
mA
60
240
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-
800
mA, I
B
=-
80
mA
-0.5
V
Base-emitter voltage
V
BE
V
CE
=-
2
V, I
C
=-
500
mA
-1
V
Transition frequency
f
T
V
CE
=-
2
V, I
C
=-
500
mA
350
MHz
Collector output capacitance
C
ob
V
CB
=-
10
V, I
E
=0, f=
1
MHz
38
pF
CLASSIFICATION OF h
FE
Rank
A
B
C
Range
60-120
85-170
120-240
1 2 3
TO-92L
1.
EMITTER
2.
COLLECTOR
3.
BASE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPT5610-TO-92L | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR (PNP) |
| TP-TAPE-SWARE | 制造商:TE Connectivity 功能描述:F30821-000 |
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| TPTB320 | 制造商:Duratool 功能描述:Tamperproof Torx Pan Head Bolt M3 x 20mm - 100pc |
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