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4
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TQ1090
Limits
4
Typ
Symbol
Description
Test Conditions
Min
Max
Unit
V
OHT
Output HIGH voltage
V
DD
V
IN
= V
IH
or V
IL
V
DD
= Min
V
IN
= V
IH
or V
IL
V
DD
= Min
V
IN
= V
IH
or V
IL
Guaranteed input logical HIGH
Voltage for all Inputs
Guaranteed input logical LOW
Voltage for all inputs
V
DD
= Max
V
DD
= Max
V
DD
= Max
V
DD
= Max
V
DD
= Min
= Min
I
OH
= –30 mA
2.4
3.4
V
V
OHC
Output HIGH voltage
I
OH
= –1 mA
3.2
4.1
V
V
OL
Output LOW voltage
I
OL
= 30 mA
0.27
0.5
V
V
IH 5
Input HIGH level
2.0
V
V
IL5
Input LOW level
0.8
V
I
IL
I
IH
I
I
I
DDS 6
V
I
Input LOW current
Input HIGH current
Input HIGH current
Power supply current
Input clamp voltage
V
IN
= 0.40 V
V
IN
= 2.7 V
V
IN
= 5.5 V
–156
0
2
119
–0.70
–400
25
1000
170
–1.2
μ
A
μ
A
μ
A
mA
V
I
IN
= –18 mA
Notes:
1. Exceeding these parameters may damage the device.
2. Maximum ambient temperature with device not switching and unloaded.
3. These values apply to both TQ1089-MC500 and TQ1089-MC700.
4. Typical limits are at V
DD
= 5.0 V and T
A
= 25
°
C.
5. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included.
6. This parameter is measured with device not switching and unloaded.
7. These parameters are not 100% tested, but are periodically sampled.
Symbol
Description
Test Conditions
Min
Typ
Max
Unit
C
IN 3
Input capacitance
V
IN
= 2.0 V at f = 1 MHz
6
pF
(V
DD
= +5 V + 5%, T
A
= 0
°
C to +70
°
C)
3
Absolute Maximum Ratings
1
DC Characteristics
Capacitance
Storage temperature
Ambient temperature with power applied
2
Supply voltage to ground potential
DC input voltage
DC input current
Package thermal resistance (MQuad)
Die junction temperature
–65
°
C to +150
°
C
–55
°
C to +100
°
C
–0.5 V to +7.0 V
–0.5 V to +(V
DD
+ 0.5)V
–30 mA to +5 mA
θ
JA
= 45
°
C/W
T
J
= 150
°
C