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參數(shù)資料
| 型號(hào)： | TR16-800-125 |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | SILICON TRIACS |
| 中文描述： | 硅雙向可控硅 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 63K |
| 代理商： | TR16-800-125 |
TR16 SERIES
SILICON TRIACS
l
High Current Triacs
l
16 A RMS
l
Glass Passivated Wafer
l
400 V to 800 V Off-State Voltage
l
125 A Peak Current
l
Max I
GT
of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
1
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
SYMBOL
VALUE
400
600
700
800
16
125
±1
-40 to +110
-40 to +125
230
UNIT
Repetitive peak off-state voltage (see Note 1)
TR16-400-125
TR16-600-125
TR16-700-125
TR16-800-125
V
DRM
V
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
GM
T
C
T
stg
T
L
A
A
A
°C
°C
°C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0
T
C
= 110°C
±2
mA
I
GT
Gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
I
TM
= ±22.5 A
V
supply
= +12 V
V
supply
= -12 V
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
I
G
= 50mA
I
G
= 0
I
G
= 0
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
(see Note 4)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
12
-19
-16
34
0.8
-0.8
-0.8
0.9
±1.4
22
-12
50
-50
-50
mA
V
GT
Gate trigger
voltage
2
-2
-2
2
V
V
T
On-state voltage
±1.7
40
-40
V
I
H
Holding current
mA
All voltages are with respect to Main Terminal 1.
NOTE
4: This parameter must be measured using pulse techniques, t
p
=
￡
1 ms, duty cycle
￡
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
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