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參數資料
| 型號： | TR8 |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | SILICON TRIACS |
| 中文描述： | 硅雙向可控硅 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 155K |
| 代理商： | TR8 |
TR8 SERIES
SILICON TRIACS
All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
￡
1 ms, duty cycle
￡
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
W
, t
p(g)
= 20
m
s, t
r
=
￡
15 ns, f = 1 kHz.
V
TM
Peak on-state voltage
I
TM
= ±12 A
V
supply
= +12 V
V
supply
= -12 V
V
supply
= +12 V
V
supply
= -12 V
I
G
= 50 mA
I
G
= 0
I
G
= 0
(see Note 6)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
±1.6
5
-9
±2.1
30
-30
50
-50
V
I
H
Holding current
mA
I
L
Latching current
(see Note 7)
mA
dv/dt
Critical rate of rise of
off-state voltage
Critical rise of commu-
tation voltage
V
DRM
= Rated V
DRM
I
G
= 0
T
C
= 110°C
±100
V/μs
dv/dt
(c)
V
DRM
= Rated V
DRM
I
TRM
= ±12 A
T
C
= 85°C
±5
V/μs
thermal characteristics
PARAMETER
MIN
TYP
MAX
1.8
62.5
UNIT
°C/W
°C/W
R
q
JC
R
q
JA
Junction to case thermal resistance
Junction to free air thermal resistance
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
GATE TRIGGER CURRENT
vs
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
I
G
0·1
1
10
100
1000
CASE TEMPERATURE
V
AA
= ± 12 V
R
L
= 10
W
t
p(g)
= 20 μs
V
supply
I
GTM
+ +
+ -
- -
- +
GATE TRIGGER VOLTAGE
vs
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
V
G
0·1
1
10
CASE TEMPERATURE
V
supply
I
GTM
+ +
+ -
- -
- +
V
AA
= ± 12 V
R
L
= 10
W
t
p(g)
= 20 μs
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