參數(shù)資料
型號: TS5A23166DCURE4
廠商: TEXAS INSTRUMENTS INC
元件分類: 多路復用及模擬開關(guān)
英文描述: DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8
封裝: GREEN, PLASTIC, VSSOP-8
文件頁數(shù): 7/28頁
文件大?。?/td> 694K
代理商: TS5A23166DCURE4
www.ti.com
SCDS196E – MAY 2005 – REVISED MARCH 2010.
Table 3. PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNO
Voltage at NO
ron
Resistance between COM and NO ports when the channel is ON
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
INO(ON)
(COM) open
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
ICOM(ON)
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
tON
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
tOFF
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
QC
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input.Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CI
Capacitance of IN
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
OISO
frequency, with the corresponding channel (NO to COM) in the OFF state.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
THD
harmonics to the magnitude of fundamental harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
ΔI+
This is the increase in I+ for each control (IN) input that is at the specified voltage, rather than at V+ or GND.
Copyright 2005–2010., Texas Instruments Incorporated
15
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