參數(shù)資料
型號: TS616IDW
廠商: 意法半導(dǎo)體
元件分類: 運(yùn)動(dòng)控制電子
英文描述: DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT
中文描述: 雙寬帶運(yùn)放的大輸出電流
文件頁數(shù): 25/27頁
文件大?。?/td> 2728K
代理商: TS616IDW
TS616
25/27
Component Calculation
Let us consider the equivalent circuit for a sin-
gle-ended configuration as shown in Figure 69.
Figure 69:
Single ended equivalent circuit
Let us consider the unloaded system. Assuming
the currents through R1, R2 and R3
are respectively:
as Vo
°
equals Vo without load, the gain in this
case becomes :
The gain, for the loaded system will be (eq1):
As shown in Figure70, this system is an ideal gen-
erator with a synthesized impedance as the inter-
nal impedance of the system. From this, the out-
put voltage becomes:
with Ro the synthesized impedance and Iout the
output current. On the other hand Vo can be ex-
pressed as:
By identification of both equations (eq2) and
(eq3), the synthesized impedance is, with
Rs1=Rs2=Rs:
-----Rs
=
Figure 70:
Equivalent schematic. Ro is the
synthesized impedance.
Unlike the level Vo
°
required for a passive imped-
ance, Vo
°
will be smaller than 2Vo in our case. Let
us write Vo
°
=kVo with k the matching factor vary-
ing between 1 and 2. Assuming that the current
through R3 is negligible, (eq4) becomes the fol-
lowing :
After choosing the k factor, Rs will equal to
1/2RL(k-1).
A good impedance matching assumes:
(eq4) and (eq5) give :
By fixing an arbitrary value of R2, (eq6) becomes :
Finally, the values of R2 and R3 allow us to extract
R1 from (eq1), and it becomes:
R2
R3
+
_
Vi
Vo
Rs1
-1
Vo°
RL
R1
R1
Vi
--------R2
Vo
°
(
)
-------R3
)
,
G
Vi
)
Vo noload
1
------------R1
2R2
R3
R2
+
+
1
R3
=
=
GL
)
Vo wVi
1
2
1
----------R1
2R2
R3
R2
+
+
1
R3
(
)
,
=
=
Vo
ViG
(
)
RoIout
(
)
=
eq2
(
)
,
Vo
Vi 1
-----------------------R2
R1
R3
+
+
1
R3
Rs1R2
1
R3
(
)
,
=
Ro
1
R3
R2
(
)
,
Ro
Vi.Gi
Iout
1/2
RL
Ro
2Rs1
+
RL
=
Ro
1
(
)
,
=
R3
1
RL
,
(
)
=
R3
1
RL
-----R2
=
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